Inventor
Ho Kyun Ahn
Inventor
Daejeon, KR
Overview
Patents· 28 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices37%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H01LSemiconductor devices18%
H01PWaveguides5%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
H03FAmplifiers4%
A47JKitchen equipment2%
H01QAntennas, i.e. radio aerials2%
H03GControl of amplification2%
H03HImpedance networks, e.g. resonant circuits2%
PatentTitleYear
10,134,854High electron mobility transistor and fabrication method thereof20189,899,226'Semiconductor device and fabrication method thereof'20189,837,719Patch antenna20179,780,176'High reliability field effect power device and manufacturing method thereof'20179,537,458'Feedback amplifier'20179,438,199'Component package including matching circuit and matching method thereof'20169,209,266'High electron mobility transistor and manufacturing method thereof'20159,166,011'Semiconductor device having stable gate structure and method of manufacturing the same'20159,165,896'GaN transistor with improved bonding pad structure and method of fabricating the same'20159,012,920'Wafer level packaged GaN power semiconductor device and the manufacturing method thereof'20158,937,002'Nitride electronic device and method for manufacturing the same'20158,841,154'Method of manufacturing field effect type compound semiconductor device'20148,772,833'Power semiconductor device and fabrication method thereof'20148,722,474'Semiconductor device including stepped gate electrode and fabrication method thereof'20148,723,222'Nitride electronic device and method for manufacturing the same'20148,697,507'Transistor of semiconductor device and method of fabricating the same'20147,973,368'Semiconductor device with T-gate electrode'20117,902,572'Field effect transistor and method for manufacturing the same'20117,893,462'Transistor of semiconductor device and method of fabricating the same'20117,889,023'Switching circuit for millimeter waveband control circuit'20117,871,874'Transistor of semiconductor device and method of fabricating the same'20117,671,697'High-isolation switching device for millimeter-wave band control circuit'20107,518,166'Transistor or semiconductor device comprising ohmic contact in an epitaxy substrate'20097,429,894'Power device having connection structure compensating for reactance component of transmission line'20087,419,862'Method of fabricating pseudomorphic high electron mobility transistor'20087,387,955'Field effect transistor and method for manufacturing the same'20087,183,149'Method of manufacturing field effect transistor'20076,593,603'Pseudomorphic high electron mobility transistor power device'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003–2015Patents assigned to KOREA ELECTRONICS TELECOMM (21)· patent assignee history
2003Based in Daejon, KR· patent location history
2007–2018Based in Daejeon, KR· patent location history
2011Based in Deajeon, KR· patent location history
2014Patents assigned to AHN HO KYUN (4)· patent assignee history
2014Patents assigned to MUN JAE KYOUNG (4)· patent assignee history
2014Patents assigned to NAM EUN SOO (3)· patent assignee history
2016–2018Patents assigned to ELECTRONICS & TELECOMMUNICATIONS RES INST (6)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| KOREA ELECTRONICS TELECOMM | 21 | 2003–2015 |
| ELECTRONICS & TELECOMMUNICATIONS RES INST | 6 | 2016–2018 |
| AHN HO KYUNself | 4 | 2014 |
| MUN JAE KYOUNG | 4 | 2014 |
| NAM EUN SOO | 3 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Daejeon, KR | 26 | 2007–2018 |
| Deajeon, KR | 1 | 2011 |
| Daejon, KR | 1 | 2003 |