Inventor
Jonathan Heffernan
Inventor
Oxford, GB
Overview
Patents· 29 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
B82Yprimary
B82YSpecific uses or applications of nanostructures11%
C30BSingle-crystal growth11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
H10HInorganic light-emitting semiconductor devices having potential barriers10%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light9%
C01BNon-metallic elements5%
C09KMaterials for miscellaneous applications, not provided for elsewhere5%
H10DInorganic electric semiconductor devices4%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%
PatentTitleYear
9,985,173II-III-N semiconductor nanoparticles and method of making same20189,938,148Method of synthesising nitride nanocrystals20189,326,348'Solid state illumination system'20168,975,618'Energy conversion device with selective contacts'20158,945,964'Fabrication of nitride nanoparticles'20158,900,489'II-III-N semiconductor nanoparticles and method of making same'20148,778,781'Method of growing a thin film, a method of forming a structure and a device'20148,552,417'Nanoparticles'20138,362,553'Multifunctional tape'20138,258,524'Light emitting diode device'20128,173,908'Device interconnects'20127,951,694'Semiconductor structure and method of manufacture of same'20117,947,548'Multifunctional tape'20117,867,799'MBE growth of a semiconductor laser diode'20117,648,577'MBE growth of p-type nitride semiconductor materials'20107,629,237'MBE growth of a semiconductor layer structure'20097,605,011'Semiconductor device and a method of manufacturing a semiconductor device'20097,569,862'Semiconductor light-emitting device and a method of manufacture thereof'20097,504,321'MBE growth of an algan layer or AlGaN multilayer structure'20097,417,258'Semiconductor light-emitting device, and a method of manufacture of a semiconductor device'20087,375,367'Semiconductor light-emitting device having an active region with aluminum-containing layers forming the lowermost and uppermost layer'20087,358,112'Method of growing a semiconductor layer'20087,276,391'Manufacture of a semiconductor device'20077,263,115'Semiconductor device and a method of manufacturing a semiconductor device'20077,115,167'Method of growing a semiconductor multi-layer structure'20066,500,258'Method of growing a semiconductor layer'20026,440,214'Method of growing a semiconductor layer'20026,303,473'Method of growing group III or group III-V nitride layer'20016,084,898'Laser devices including separate confinement heterostructure'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2018Patents assigned to SHARP KK (29)· patent assignee history
2000–2016Based in Oxford, GB· patent location history
2012–2016Patents assigned to HEFFERNAN JONATHAN (9)· patent assignee history
2012–2015Patents assigned to DAY STEPHEN (4)· patent assignee history
2012–2014Patents assigned to ALTEBAEUMER THOMAS HEINZ-HELMUT (3)· patent assignee history
2013–2015Patents assigned to TAYLOR PETER NEIL (3)· patent assignee history
2018Based in Sheffield, GB· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SHARP KK | 29 | 2000–2018 |
| HEFFERNAN JONATHANself | 9 | 2012–2016 |
| DAY STEPHEN | 4 | 2012–2015 |
| ALTEBAEUMER THOMAS HEINZ-HELMUT | 3 | 2012–2014 |
| TAYLOR PETER NEIL | 3 | 2013–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Oxford, GB | 27 | 2000–2016 |
| Sheffield, GB | 2 | 2018 |