Inventor
Lih-Ping Li
Inventor
Hsinchu, TW
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1044%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1031%
C23CCoating metallic material11%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%
C01BNon-metallic elements3%
H01LSemiconductor devices3%
H10DInorganic electric semiconductor devices3%
PatentTitleYear
10,998,452Semiconductor device having a lateral semiconductor heterojunction and method20217,897,505'Method for enhancing adhesion between layers in BEOL fabrication'20117,456,093'Method for improving a semiconductor device delamination resistance'20087,320,945'Gradient low k material'20087,288,284'Post-cleaning chamber seasoning method'20077,001,833'Method for forming openings in low-k dielectric layers'20066,962,869'SiOCH low k surface protection layer formation by CxHy gas plasma treatment'20056,958,524'Insulating layer having graded densification'20056,924,242'SiOC properties and its uniformity in bulk for damascene applications'20056,884,659'Thin interface layer to improve copper etch stop'20056,867,126'Method to increase cracking threshold for low-k materials'20056,812,043'Method for forming a carbon doped oxide low-k insulating layer'20046,770,570'Method of forming a semiconductor device with a substantially uniform density low-k dielectric layer'20046,756,321'Method for forming a capping layer over a low-k dielectric with improved adhesion and reduced dielectric constant'20046,753,269'Method for low k dielectric deposition'20046,623,654'Thin interface layer to improve copper etch stop'20036,602,780'Method for protecting sidewalls of etched openings to prevent via poisoning'20036,426,371'Sol materials'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002Patents assigned to CHINESE PETROLEUM CORP (1)· patent assignee history
2002Patents assigned to IND TECH RES INST (1)· patent assignee history
2002Patents assigned to TAIWAN FERTILIZER CO LTD (1)· patent assignee history
2002–2003Based in Taipei, TW· patent location history
2003–2011Patents assigned to TAIWAN SEMICONDUCTOR MFG (16)· patent assignee history
2003–2011Based in Hsinchu, TW· patent location history
2021Patents assigned to UNIV KING ABDULLAH SCI & TECH (1)· patent assignee history
2021Based in Thuwal, SA· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG | 16 | 2003–2011 |
| CHINESE PETROLEUM CORP | 1 | 2002 |
| IND TECH RES INST | 1 | 2002 |
| TAIWAN FERTILIZER CO LTD | 1 | 2002 |
| UNIV KING ABDULLAH SCI & TECH | 1 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 15 | 2003–2011 |
| Taipei, TW | 2 | 2002–2003 |
| Thuwal, SA | 1 | 2021 |