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Inventor

Ryoiku Tohgei

Inventor
Machida, JP

Overview

2→
Patents
1981–1982
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

Y10Sprimary
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests40%
H10DInorganic electric semiconductor devices20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
PatentTitleYear
4,316,203'Insulated gate field effect transistor'19824,275,093'Method of manufacturing insulated gate semiconductor devices by high pressure thermal oxidation with water vapor'1981

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1981–1982Patents assigned to FUJITSU LTD (2)· patent assignee history
1981–1982Based in Machida, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
FUJITSU LTD21981–1982
Locations
LocationPatentsSpan
Machida, JP21981–1982