Inventor
Jiun-Fang Wang
Inventor
Hsinchu, TW
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
C09KMaterials for miscellaneous applications, not provided for elsewhere19%
B24BMachines, devices, or processes for grinding or polishing17%
C09GPolishing compositions11%
C03CChemical composition of glasses, glazes or vitreous enamels9%
H01LSemiconductor devices6%
C23FNon-mechanical removal of metallic material from surface4%
B24DTools for grinding, buffing or sharpening2%
B82YSpecific uses or applications of nanostructures2%
C01FCompounds of the metals beryllium, magnesium, aluminium, calcium, strontium, barium, radium, thorium, or of the rare-earth metals2%
PatentTitleYear
11,083,093Outdoor electronics enclosure with modular structure202110,573,524Method of chemical mechanical polishing a semiconductor substrate202010,557,060Method of chemical mechanical polishing a substrate20209,299,585'Method for chemical mechanical polishing substrates containing ruthenium and copper'20166,749,484'Chemical mechanical polishing (CMP) apparatus with temperature control'20046,632,742'Method for avoiding defects produced in the CMP process'20036,478,659'Chemical mechanical polishing method for slurry free fixed abrasive pads'20026,432,728'Method for integration optimization by chemical mechanical planarization end-pointing technique'20026,306,022'Chemical-mechanical polishing device'20016,227,949'Two-slurry CMP polishing with different particle size abrasives'20016,218,305'Composition and method for polishing a composite of silica and silicon nitride'20016,132,637'Composition and method for polishing a composite of silica and silicon nitride'20006,130,163'Stabilization of slurry used in chemical mechanical polishing of semiconductor wafers by adjustment of PH of deionized water'20006,053,802'Stabilization of slurry used in chemical mechanical polishing of semiconductor wafers by megasonic pulse'20006,042,741'Composition for polishing a composite of silica and silicon nitride'20005,769,689'Compositions and methods for polishing silica, silicates, and silicon nitride'19985,756,398'Composition and method for polishing a composite comprising titanium'19985,738,800'Composition and method for polishing a composite of silica and silicon nitride'19985,693,239'Polishing slurries comprising two abrasive components and methods for their use'19975,389,352'Oxide particles and method for producing them'1995Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1995–2001Patents assigned to RODEL INC (8)· patent assignee history
1995Based in Piscataway, NJ, US· patent location history
1997–2001Based in Hockessin, DE, US· patent location history
2000–2004Patents assigned to PROMOS TECHNOLOGIES INC (8)· patent assignee history
2000–2001Patents assigned to MOSEL VITELIC INC (3)· patent assignee history
2000–2020Based in Hsinchu, TW· patent location history
2000Based in Hainchu, TW· patent location history
2020Patents assigned to ROHM & HAAS ELECT MATERIALS CMP HOLDINGS INC (2)· patent assignee history
2021Patents assigned to COMMSCOPE TECHNOLOGIES LLC (1)· patent assignee history
2021Based in Shanghai, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| PROMOS TECHNOLOGIES INC | 8 | 2000–2004 |
| RODEL INC | 8 | 1995–2001 |
| MOSEL VITELIC INC | 3 | 2000–2001 |
| ROHM & HAAS ELECT MATERIALS CMP HOLDINGS INC | 2 | 2020 |
| COMMSCOPE TECHNOLOGIES LLC | 1 | 2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 10 | 2000–2020 |
| Hockessin, Delaware, US | 7 | 1997–2001 |
| Shanghai, CN | 1 | 2021 |
| Hainchu, TW | 1 | 2000 |
| Piscataway, New Jersey, US | 1 | 1995 |