Inventor
JOHN MARK MELDRIM
Inventor
US
Overview
Patents· 11 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices28%
H01LSemiconductor devices22%
H10DInorganic electric semiconductor devices17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
G11CStatic stores6%
C01GCompounds containing metals not covered by subclasses c01d or c01f3%
C01PIndexing scheme relating to structural and physical aspects of solid inorganic compounds3%
C23CCoating metallic material3%
H10NElectric solid-state devices not otherwise provided for3%
PatentTitleYear
12,324,157Integrated circuitry, comprising a pair of opposing lateral projections in insulating material in a cavity202512,295,140Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells202512,114,492Memories having vertically stacked conductive filled structures202412,034,057Assemblies which include wordlines having a first metal-containing material at least partially surrounding a second metal-containing material and having different crystallinity than the second metal-containing material202411,990,528Assemblies having conductive structures with three or more different materials202411,818,968Conductive interconnects suitable for utilization in integrated assemblies, and methods of forming conductive interconnects202311,705,500Assemblies having conductive structures with three or more different materials202311,647,633Methods used in forming integrated circuitry comprising a stack comprising vertically-alternating first tiers and second tiers with the stack comprising a cavity therein that comprises a stair-step structure202311,646,206Methods of forming tungsten structures202311,177,276Conductive structures, assemblies having vertically-stacked memory cells over conductive structures, and methods of forming conductive structures202111,158,718Assemblies which include wordlines having a first metal-containing material at least partially surrounding a second metal-containing material and having different crystallinity than the second metal-containing material2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2025Patents assigned to MICRON TECHNOLOGY INC (10)· patent assignee history
2021–2025Based in US· patent location history
2024Patents assigned to LODESTAR LICENSING GROUP LLC (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MICRON TECHNOLOGY INC | 10 | 2021–2025 |
| LODESTAR LICENSING GROUP LLC | 1 | 2024 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 11 | 2021–2025 |