Inventor

Jin-Ho Jeon

Inventor

Seoul, KR

Overview

17→

Patents

2000–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 17 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1031%

C23CCoating metallic material23%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%

H10DInorganic electric semiconductor devices9%

H04WWireless communication networks6%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests6%

F17DPipe-line systems3%

H01JElectric discharge tubes or discharge lamps3%

Y02BClimate change mitigation technologies related to buildings, e.g. housing, house appliances or related end-user applications3%

Y02DClimate change mitigation technologies in information and communication technologies [ict], i.e. information and communication technologies aiming at the reduction of their own energy use3%

PatentTitleYear

10,694,340Apparatus for producing radio map and method of operating same2020 9,924,307'Terminal for performing position measurement and operating method thereof'2018 7,964,473'Method of filling an opening in the manufacturing of a semiconductor device'2011 7,910,491'Gapfill improvement with low etch rate dielectric liners'2011 7,867,921'Reduction of etch-rate drift in HDP processes'2011 7,745,350'Impurity control in HDP-CVD DEP/ETCH/DEP processes'2010 7,446,367'Reliable gap-filling process and apparatus for performing the process in the manufacturing of semiconductor devices'2008 7,183,214'High-density plasma (HDP) chemical vapor deposition (CVD) methods and methods of fabricating semiconductor devices employing the same'2007 7,180,129'Semiconductor device including insulating layer'2007 6,858,062'Residual gas removing device and method thereof'2005 6,838,645'Heater assembly for manufacturing a semiconductor device'2005 6,730,619'Method of manufacturing insulating layer and semiconductor device including insulating layer'2004 6,569,782'Insulating layer, semiconductor device and methods for fabricating the same'2003 6,451,694'Control of abnormal growth in dichloro silane (DCS) based CVD polycide WSix films'2002 6,387,776'Method for forming trench isolation regions'2002 6,305,390'Method for cleaning inside of chamber using RF plasma'2001 6,124,202'Methods of fabricating silicide layers and silicide contact structures in microelectronic devices'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2011Patents assigned to SAMSUNG ELECTRONICS CO LTD (11)· patent assignee history

2000–2018Based in Seoul, KR· patent location history

2007Patents assigned to SAMSUNG ELECTRONICS CO LGD (1)· patent assignee history

2007Based in Gyeonggi-do, KR· patent location history

2008–2011Based in Suwon-si, KR· patent location history

2010–2011Patents assigned to APPLIED MATERIALS INC (3)· patent assignee history

2010–2011Based in San Ramon, CA, US· patent location history

2018–2020Patents assigned to SK PLANET CO LTD (2)· patent assignee history

2020Based in Seongnam-si, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SAMSUNG ELECTRONICS CO LTD	11	2000–2011
APPLIED MATERIALS INC	3	2010–2011
SK PLANET CO LTD	2	2018–2020
SAMSUNG ELECTRONICS CO LGD	1	2007

Locations

Location	Patents	Span
Seoul, KR	9	2000–2018
San Ramon, California, US	3	2010–2011
Suwon-si, KR	2	2008–2011
Seongnam-si, KR	1	2020
Gyeonggi-do, KR	1	2007