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Inventor

Dean E. Probst

Inventor
West Jordan, UT, US

Overview

56→
Patents
2002–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 56 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices44%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
H01LSemiconductor devices11%
G02BOptical elements, systems or apparatus5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
C23FNon-mechanical removal of metallic material from surface4%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems2%
Y02BClimate change mitigation technologies related to buildings, e.g. housing, house appliances or related end-user applications2%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein1%
PatentTitleYear
11,133,381Reverse recovery charge reduction in semiconductor devices202111,075,148Stacked transistor assembly with dual middle mounting clips202111,049,956Method of forming a semiconductor device202110,868,113Trench-based power semiconductor devices with increased breakdown voltage characteristics202010,600,905Trench MOSFET contacts202010,340,372Transistor device having a pillar structure201910,268,046Cube polarizer20199,798,058'Wire grid polarizer with side region'20179,726,897'Cube polarizer with minimal optical path length difference'20179,632,223'Wire grid polarizer with side region'20179,391,193'Trench-based power semiconductor devices with increased breakdown voltage characteristics'20169,354,374'Polarizer with wire pair over rib'20169,348,076'Polarizer with variable inter-wire distance'20169,293,526'Trench-based power semiconductor devices with increased breakdown voltage characteristics'20168,963,212'Trench-based power semiconductor devices with increased breakdown voltage characteristics'20158,936,985'Methods related to power semiconductor devices with thick bottom oxide layers'20158,932,924'Trench-based power semiconductor devices with increased breakdown voltage characteristics'20158,884,365'Trench-gate field effect transistor'20148,716,783'Power device with self-aligned source regions'20148,680,611'Field effect transistor and schottky diode structures'20148,610,205'Inter-poly dielectric in a shielded gate MOSFET device'20138,563,377'Trench-based power semiconductor devices with increased breakdown voltage characteristics'20138,564,024'Trench-based power semiconductor devices with increased breakdown voltage characteristics'20138,476,133'Method of manufacture and structure for a trench transistor having a heavy body region'20138,441,069'Structure and method for forming trench-gate field effect transistor with source plug'20138,338,285'Shield contacts in a shielded gate MOSFET'20128,278,702'High density trench field effect transistor'20128,193,581'Trench-based power semiconductor devices with increased breakdown voltage characteristics'20128,174,067'Trench-based power semiconductor devices with increased breakdown voltage characteristics'20128,148,749'Trench-shielded semiconductor device'20128,143,124'Methods of making power semiconductor devices with thick bottom oxide layer'20128,043,913'Method of forming trench-gate field effect transistors'20118,044,463'Method of manufacturing a trench transistor having a heavy body region'20118,034,682'Power device with trenches having wider upper portion than lower portion'20117,998,819'Lateral drain MOSFET with improved clamping voltage control'20117,952,141'Shield contacts in a shielded gate MOSFET'20117,923,776'Trench-gate field effect transistor with channel enhancement region and methods of forming the same'20117,799,636'Power device with trenches having wider upper portion than lower portion'20107,781,835'Lateral drain MOSFET with improved clamping voltage control'20107,736,978'Method of manufacturing a trench transistor having a heavy body region'20107,696,571'Method of manufacturing a trench transistor having a heavy body region'20107,598,144'Method for forming inter-poly dielectric in shielded gate field effect transistor'20097,595,524'Power device with trenches having wider upper portion than lower portion'20097,511,339'Field effect transistor and method of its manufacture'20097,504,303'Trench-gate field effect transistors and methods of forming the same'20097,416,948'Trench FET with improved body to gate alignment'20087,385,248'Shielded gate field effect transistor with improved inter-poly dielectric'20087,344,943'Method for forming a trench MOSFET having self-aligned features'20087,148,111'Method of manufacturing a trench transistor having a heavy body region'20067,078,296'Self-aligned trench MOSFETs and methods for making the same'20066,916,745'Structure and method for forming a trench MOSFET having self-aligned features'20056,828,195'Method of manufacturing a trench transistor having a heavy body region'20046,825,510'Termination structure incorporating insulator in a trench'20046,710,406'Field effect transistor and method of its manufacture'20046,700,158'Trench corner protection for trench MOSFET'20046,429,481'Field effect transistor and method of its manufacture'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002–2020Patents assigned to FAIRCHILD SEMICONDUCTOR (45)· patent assignee history
2002–2021Based in West Jordan, UT, US· patent location history
2012–2015Patents assigned to PROBST DEAN E (11)· patent assignee history
2012–2014Patents assigned to CALAFUT DANIEL (5)· patent assignee history
2016–2019Patents assigned to MOXTEK INC (6)· patent assignee history
2019–2021Patents assigned to SEMICONDUCTOR COMPONENTS IND LLC (5)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
FAIRCHILD SEMICONDUCTOR452002–2020
PROBST DEAN Eself112012–2015
MOXTEK INC62016–2019
CALAFUT DANIEL52012–2014
SEMICONDUCTOR COMPONENTS IND LLC52019–2021
Locations
LocationPatentsSpan
West Jordan, UT, US562002–2021