Inventor
Jason R. Jenny
Inventor
Wake Forest, NC, US
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth35%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H10DInorganic electric semiconductor devices16%
Y10TTechnical subjects covered by former us classification14%
H01LSemiconductor devices5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
G01NInvestigating or analysing materials by determining their chemical or physical properties2%
PatentTitleYear
9,099,377'Micropipe-free silicon carbide and related method of manufacture'20159,059,118'Method for producing semi-insulating resistivity in high purity silicon carbide crystals'20158,618,553'Process for producing silicon carbide crystals having increased minority carrier lifetimes'20138,410,488'Micropipe-free silicon carbide and related method of manufacture'20138,147,991'One hundred millimeter single crystal silicon carbide wafer'20127,811,943'Process for producing silicon carbide crystals having increased minority carrier lifetimes'20107,615,801'High voltage silicon carbide devices having bi-directional blocking capabilities'20097,601,441'One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer'20097,414,268'High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities'20087,391,057'High voltage silicon carbide devices having bi-directional blocking capabilities'20087,323,051'One hundred millimeter single crystal silicon carbide wafer'20087,323,052'Apparatus and method for the production of bulk silicon carbide single crystals'20087,319,518'Double side polished wafer scratch inspection tool'20087,316,747'Seeded single crystal silicon carbide growth and resulting crystals'20087,220,313'Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient'20077,147,715'Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen'20066,974,720'Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby'20056,964,917'Semi-insulating silicon carbide produced by Neutron transmutation doping'20056,814,801'Method for producing semi-insulating resistivity in high purity silicon carbide crystals'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2015Patents assigned to CREE INC (19)· patent assignee history
2004–2008Based in Raleigh, NC, US· patent location history
2008–2015Based in Wake Forest, NC, US· patent location history
2012–2015Patents assigned to TSVETKOV VALERI F (3)· patent assignee history
2013–2015Patents assigned to CARTER JR CALVIN H (3)· patent assignee history
2013–2015Patents assigned to JENNY JASON R (3)· patent assignee history
2013–2015Patents assigned to BALAKRISHNA VIJAY (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CREE INC | 19 | 2004–2015 |
| CARTER JR CALVIN H | 3 | 2013–2015 |
| JENNY JASON Rself | 3 | 2013–2015 |
| TSVETKOV VALERI F | 3 | 2012–2015 |
| BALAKRISHNA VIJAY | 2 | 2013–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Wake Forest, NC, US | 12 | 2008–2015 |
| Raleigh, NC, US | 7 | 2004–2008 |