Inventor

Kyung-Tae Nam

Inventor
Suwon-si, KR

Overview

28→
Patents
2007–2018
Patent span
Electricity
Primary field (CPC H)

Patents· 28 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores22%
H10NElectric solid-state devices not otherwise provided for20%
H10BElectronic memory devices15%
B82YSpecific uses or applications of nanostructures8%
H10DInorganic electric semiconductor devices5%
H01FMagnets3%
H01LSemiconductor devices3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
Y10TTechnical subjects covered by former us classification3%
G11BInformation storage based on relative movement between record carrier and transducer2%
PatentTitleYear
10,043,966Semiconductor device including via plugs20189,159,914'Nonvolatile memory devices and methods of forming the same'20159,007,819'Magnetic random access memory device and method of writing data therein'20158,952,434'Magnetic patterns and methods of forming magnetic patterns'20158,892,253'Swarm robot and sweeping method using swarm robot'20148,870,456'Opening and closing module, control method for the same, imaging apparatus using the same'20148,614,125'Nonvolatile memory devices and methods of forming the same'20138,575,753'Semiconductor device having a conductive structure including oxide and non oxide portions'20138,476,807'Rigid dual-servo nano stage'20138,345,467'Resistive memory devices including selected reference memory cells operating responsive to read operations'20138,247,880'Magnetic memory device and method of fabricating the same'20128,174,875'Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods'20128,083,962'Method for forming minute pattern and method for forming semiconductor memory device using the same'20118,058,097'Methods of forming resistive memory devices'20118,035,145'Magnetic memory device'20118,023,311'Resistive memory devices including selected reference memory cells operating responsive to read operations'20117,952,914'Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods'20117,871,866'Method of manufacturing semiconductor device having transition metal oxide layer and related device'20117,750,336'Resistive memory devices and methods of forming resistive memory devices'20107,732,222'Magnetic memory device and method of fabricating the same'20107,701,748'Nonvolatile memory devices using variable resistors as storage elements and methods of operating the same'20107,672,155'Resistive memory devices including selected reference memory cells'20107,645,619'Magnetic random access memory device and method of forming the same'20107,612,969'Magnetic memory device and method of fabricating the same'20097,582,890'Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof'20097,495,984'Resistive memory devices including selected reference memory cells'20097,372,090'Magnetic random access memory device and method of forming the same'20087,218,556'Method of writing to MRAM devices'2007

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2007–2018Patents assigned to SAMSUNG ELECTRONICS CO LTD (25)· patent assignee history
2007–2018Based in Suwon-si, KR· patent location history
2009–2014Based in Gyeonggi-do, KR· patent location history
2011–2015Patents assigned to NAM KYUNG-TAE (11)· patent assignee history
2011–2013Patents assigned to JEONG JUN-HO (6)· patent assignee history
2011–2013Patents assigned to LEE JANG-EUN (6)· patent assignee history
2011–2013Patents assigned to OH SE-CHUNG (6)· patent assignee history
2013Based in Yongin-si, KR· patent location history
2014Based in Ansan-si, KR· patent location history
2015Based in Hwaseong-si, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAMSUNG ELECTRONICS CO LTD252007–2018
NAM KYUNG-TAEself112011–2015
JEONG JUN-HO62011–2013
LEE JANG-EUN62011–2013
OH SE-CHUNG62011–2013
Locations
LocationPatentsSpan
Suwon-si, KR132007–2018
Gyeonggi-do, KR122009–2014
Hwaseong-si, KR12015
Ansan-si, KR12014
Yongin-si, KR12013