LexDanaLexDanabeta
Inventor

Gyo-young Jin

Inventor
Seoul, KR

Overview

26→
Patents
2001–2016
Patent span
Electricity
Primary field (CPC H)

Patents· 26 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices37%
H10BElectronic memory devices31%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1019%
H01LSemiconductor devices6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
G11CStatic stores2%
PatentTitleYear
9,349,724'Semiconductor device having capacitors'20169,276,074'Methods of fabricating semiconductor devices having buried channel array'20168,884,340'Semiconductor devices including dual gate electrode structures and related methods'20148,785,998'Semiconductor device having vertical channel transistor and methods of fabricating the same'20148,492,832'Semiconductor device'20138,362,536'Semiconductor device having vertical channel transistor and methods of fabricating the same'20138,264,022'Semiconductor device including contact plug and associated methods'20127,833,864'Method of doping polysilicon layer that utilizes gate insulation layer to prevent diffusion of ion implanted impurities into underlying semiconductor substrate'20107,737,512'Integrated circuit devices having uniform silicide junctions'20107,622,778'Semiconductor device having shallow trench isolation structure comprising an upper trench and a lower trench including a void'20097,501,668'Semiconductor memory devices having contact pads with silicide caps thereon'20097,465,988'Semiconductor device and method of manufacturing the same'20087,329,927'Integrated circuit devices having uniform silicide junctions'20087,307,008'Methods of forming integrated circuit devices including a multi-layer poly film cell pad contact hole'20077,297,596'Method of manufacturing a semiconductor device having a switching function'20077,288,823'Double gate field effect transistor and method of manufacturing the same'20077,265,011'Method of manufacturing a transistor'20077,223,649'Method of fabricating transistor of DRAM semiconductor device'20077,144,798'Semiconductor memory devices having extending contact pads and related methods'20067,056,781'Method of forming fin field effect transistor'20067,015,106'Double gate field effect transistor and method of manufacturing the same'20066,974,752'Methods of fabricating integrated circuit devices having uniform silicide junctions'20056,875,649'Methods for manufacturing integrated circuit devices including an isolation region defining an active region area'20056,683,364'Integrated circuit devices including an isolation region defining an active region area and methods for manufacturing the same'20046,642,125'Integrated circuits having adjacent P-type doped regions having shallow trench isolation structures without liner layers therein therebetween and methods of forming same'20036,194,309'Method for forming contact'2001

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2016Patents assigned to SAMSUNG ELECTRONICS CO LTD (25)· patent assignee history
2001–2010Based in Kyungki-do, KR· patent location history
2004–2007Based in Anyang, KR· patent location history
2006–2016Based in Seoul, KR· patent location history
2012–2016Patents assigned to HONG HYEONG-SUN (5)· patent assignee history
2012–2016Patents assigned to JIN GYO-YOUNG (5)· patent assignee history
2013–2016Patents assigned to HWANG YOO-SANG (4)· patent assignee history
2013–2014Patents assigned to CHOI SUNG-KWAN (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAMSUNG ELECTRONICS CO LTD252001–2016
HONG HYEONG-SUN52012–2016
JIN GYO-YOUNGself52012–2016
HWANG YOO-SANG42013–2016
CHOI SUNG-KWAN22013–2014
Locations
LocationPatentsSpan
Seoul, KR162006–2016
Kyungki-do, KR72001–2010
Anyang, KR32004–2007