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Inventor

Ming Cai

Inventor
Hopewell Junction, NY, US

Overview

51→
Patents
2003–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 51 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices24%
G02BOptical elements, systems or apparatus11%
G06FElectric digital data processing10%
H01LSemiconductor devices10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
H04MTelephonic communication6%
A61BDiagnosis2%
E21DShafts2%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein2%
PatentTitleYear
10,719,163Object determining method, object display method, object switching method and electronic device202010,635,454Service management method and the device202010,582,892Blood vessel image locating system202010,515,142Method and apparatus for extracting webpage information201910,348,013Card tray, method for preparing card tray, and mobile terminal201910,197,706System and method for sub-seasonal forecasts of extreme weather events in winter201910,178,948Self operatable ophthalmic device201910,143,110Middle frame member and method for manufacturing middle frame member20189,727,214'Electronic apparatus and object processing method thereof'20179,570,466'Structure and method to form passive devices in ETSOI process flow'20179,507,485'Electronic device, displaying method and file saving method'20169,484,402'Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusion'20169,461,040'System and method of varying gate lengths of multiple cores'20169,425,296'Vertical tunnel field effect transistor'20169,397,158'Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusion'20169,245,971'Semiconductor device having high mobility channel'20169,239,678'Electronic device and method, cell phone, program to achieve preset operation command thereof'20169,158,409'Object determining method, object display method, object switching method and electronic device'20159,076,775'System and method of varying gate lengths of multiple cores'20159,059,244'Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusion'20159,040,399'Threshold voltage adjustment for thin body MOSFETs'20158,957,464'Transistors with uniaxial stress channels'20158,927,364'Structure and method of high-performance extremely thin silicon on insulator complementary metal—oxide—semiconductor transistors with dual stress buried insulators'20158,899,883'Anchor tendon with selectively deformable portions'20148,765,491'Shallow trench isolation recess repair using spacer formation process'20148,697,523'Integration of SMT in replacement gate FINFET process flow'20148,658,505'Embedded stressors for multigate transistor devices'20148,659,091'Embedded stressors for multigate transistor devices'20148,648,438'Structure and method to form passive devices in ETSOI process flow'20148,643,120'FinFET with fully silicided gate'20148,633,077'Transistors with uniaxial stress channels'20148,577,192'Tunable optical filters with multiple ports'20138,530,315'finFET with fully silicided gate'20138,513,131'Fin field effect transistor with variable channel thickness for threshold voltage tuning'20138,503,058'Etalon with temperature-compensation and fine-tuning adjustment'20138,492,218'Removal of an overlap of dual stress liners'20138,485,758'Yieldable cone bolt and method of manufacturing same'20138,470,678'Tensile stress enhancement of nitride film for stressed channel field effect transistor fabrication'20138,421,132'Post-planarization UV curing of stress inducing layers in replacement gate transistor fabrication'20138,358,466'Optical delay line interferometers with silicon dual mirror for DPSK'20138,349,716'Semiconductor device with reduced junction leakage and an associated method of forming such a semiconductor device'20138,294,981'Optical amplifiers using switched filter devices'20127,603,006'Optical switch having angle tuning elements and multiple-fiber collimators'20097,286,730'Optical switch having angle tuning elements and multiple-fiber collimators'20077,221,818'Optical switch'20077,184,623'Apparatus, system and method for an adiabatic coupler for multi-mode fiber-optic transmission systems'20077,057,195'Scanner and calibration method used therein'20066,859,582'Dual-wavelength hybrid waveguide coupler'20056,741,628'Micro-cavity laser'20046,583,399'Optical resonator microsphere sensor with altering Q-factor'20036,580,851'Resonator fiber bidirectional coupler'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2004Based in Pasadena, CA, US· patent location history
2007–2013Based in Fremont, CA, US· patent location history
2012–2020Patents assigned to CAI MING (26)· patent assignee history
2013–2015Patents assigned to IBM (17)· patent assignee history
2013–2015Patents assigned to GUO DECHAO (12)· patent assignee history
2013–2015Patents assigned to YEH CHUN-CHEN (12)· patent assignee history
2013–2017Based in Hopewell Junction, NY, US· patent location history
2014–2016Based in San Diego, CA, US· patent location history
2015–2020Patents assigned to BEIJING LENOVO SOFTWARE LTD (5)· patent assignee history
2015–2020Based in Beijing, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
CAI MINGself262012–2020
IBM172013–2015
GUO DECHAO122013–2015
YEH CHUN-CHEN122013–2015
BEIJING LENOVO SOFTWARE LTD52015–2020
Locations
LocationPatentsSpan
Hopewell Junction, New York, US182013–2017
Fremont, California, US82007–2013
San Diego, California, US62014–2016
Beijing, CN52015–2020
Pasadena, California, US32003–2004