Inventor

Kohichi Arai

Inventor

Tokyo, JP

Overview

3→

Patents

2000–2005

Patent span

General tagging of new technological developments

Primary field (CPC Y)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Fprimary

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation29%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution29%

Y02PClimate change mitigation technologies in the production or processing of goods29%

H10DInorganic electric semiconductor devices14%

PatentTitleYear

6,933,569'SOI MOSFET'2005 6,379,993'Solid-state imaging device with a film of low hydrogen permeability and a method of manufacturing same'2002 6,147,390'Solid-state imaging device with film of low hydrogen permeability including openings'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2005Patents assigned to NEC CORP (3)· patent assignee history

2000–2005Based in Tokyo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
NEC CORP	3	2000–2005

Locations

Location	Patents	Span
Tokyo, JP	3	2000–2005