Inventor
Glen A. Slack
Inventor
Scotia, NY, US
Overview
Patents· 38 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth23%
Y10TTechnical subjects covered by former us classification18%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H01LSemiconductor devices11%
H10HInorganic light-emitting semiconductor devices having potential barriers9%
H10DInorganic electric semiconductor devices6%
C23CCoating metallic material4%
B28DWorking stone or stone-like materials2%
C04BLime, magnesia2%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light1%
PatentTitleYear
11,124,892Defect reduction in seeded aluminum nitride crystal growth202111,015,263Defect reduction in seeded aluminum nitride crystal growth202110,801,127Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them202010,697,085Defect reduction in seeded aluminum nitride crystal growth202010,692,980Doped aluminum nitride crystals and methods of making them202010,392,722Defect reduction in seeded aluminum nitride crystal growth201910,316,428Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them201910,125,432Defect reduction in seeded aluminum nitride crystal growth201810,068,973Doped aluminum nitride crystals and methods of making them20189,970,127Method and apparatus for producing large, single-crystals of aluminum nitride20189,771,666'Defect reduction in seeded aluminum nitride crystal growth'20179,670,591'Defect reduction in seeded aluminum nitride crystal growth'20179,598,791'Large aluminum nitride crystals with reduced defects and methods of making them'20179,525,032'Doped aluminum nitride crystals and methods of making them'20169,447,521'Method and apparatus for producing large, single-crystals of aluminum nitride'20169,447,519'Aluminum nitride bulk crystals having high transparency to untraviolet light and methods of forming them'20169,034,103'Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them'20158,896,020'Method and apparatus for producing large, single-crystals of aluminum nitride'20148,834,630'Defect reduction in seeded aluminum nitride crystal growth'20148,747,552'Doped aluminum nitride crystals and methods of making them'20148,580,035'Large aluminum nitride crystals with reduced defects and methods of making them'20138,545,629'Method and apparatus for producing large, single-crystals of aluminum nitride'20138,349,077'Large aluminum nitride crystals with reduced defects and methods of making them'20138,323,406'Defect reduction in seeded aluminum nitride crystal growth'20128,222,650'Nitride semiconductor heterostructures and related methods'20128,123,859'Method and apparatus for producing large, single-crystals of aluminum nitride'20128,088,220'Deep-eutectic melt growth of nitride crystals'20128,012,257'Methods for controllable doping of aluminum nitride bulk crystals'20117,776,153'Method and apparatus for producing large, single-crystals of aluminum nitride'20107,641,735'Doped aluminum nitride crystals and methods of making them'20107,638,346'Nitride semiconductor heterostructures and related methods'20097,211,146'Powder metallurgy crucible for aluminum nitride crystal growth'20076,890,668'Thermal barrier coating material'20056,770,135'Method and apparatus for producing large, single-crystals of aluminum nitride'20046,719,843'Powder metallurgy tungsten crucible for aluminum nitride crystal growth'20046,686,060'Thermal barrier coating material'20046,188,011'Thermoelectric materials fabricated from clathrate compounds and other materials which form an inclusion complex and method for optimizing selected thermoelectric properties'20014,239,502'Diamond and cubic boron nitride grinding wheels with improved silver alloy bonds'1980Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1980–2021Based in Scotia, NY, US· patent location history
2004–2021Patents assigned to CRYSTAL IS INC (34)· patent assignee history
2012–2021Patents assigned to SLACK GLEN A (16)· patent assignee history
2012–2021Patents assigned to SCHOWALTER LEO J (15)· patent assignee history
2012–2021Patents assigned to BONDOKOV ROBERT T (9)· patent assignee history
2012–2021Patents assigned to MORGAN KENNETH E (9)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CRYSTAL IS INC | 34 | 2004–2021 |
| SLACK GLEN Aself | 16 | 2012–2021 |
| SCHOWALTER LEO J | 15 | 2012–2021 |
| BONDOKOV ROBERT T | 9 | 2012–2021 |
| MORGAN KENNETH E | 9 | 2012–2021 |
Locations
| Location | Patents | Span |
|---|---|---|
| Scotia, New York, US | 38 | 1980–2021 |