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Inventor

Tamas Horanyi

Inventor
Budapest, HU

Overview

2→
Patents
1994–1996
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C25Fprimary
C25FProcesses for the electrolytic removal of materials from objects25%
G01NInvestigating or analysing materials by determining their chemical or physical properties25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1025%
PatentTitleYear
5,580,828'Method for chemical surface passivation for in-situ bulk lifetime measurement of silicon semiconductor material'19965,300,200'Method for stabilizing the effective dissolution valence of silicon during electrochemical depth profiling'1994

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1994–1996Patents assigned to SEMICONDUCTOR PHYSICS LAB RT (2)· patent assignee history
1994–1996Based in Budapest, HU· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SEMICONDUCTOR PHYSICS LAB RT21994–1996
Locations
LocationPatentsSpan
Budapest, HU21994–1996