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Inventor

Hong-Long Chang

Inventor
Hsinchu, TW

Overview

7→
Patents
2000–2008
Patent span
Electricity
Primary field (CPC H)

Patents· 7 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1060%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests20%
H10BElectronic memory devices10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
PatentTitleYear
7,344,995'Method for preparing a structure with high aspect ratio'20087,241,659'Volatile memory devices and methods for forming same'20076,526,996'Dry clean method instead of traditional wet clean after metal etch'20036,500,766'Post-cleaning method of a via etching process'20026,410,417'Method of forming tungsten interconnect and vias without tungsten loss during wet stripping of photoresist polymer'20026,399,509'Defects reduction for a metal etcher'20026,143,653'Method of forming tungsten interconnect with tungsten oxidation to prevent tungsten loss'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2008Patents assigned to PROMOS TECHNOLOGIES INC (7)· patent assignee history
2000–2003Patents assigned to MOSEL VITELIC INC (2)· patent assignee history
2000Patents assigned to SIEMENS AG (1)· patent assignee history
2000–2008Based in Hsinchu, TW· patent location history
2003Patents assigned to INFINEON TECHNOLOGIES INC (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
PROMOS TECHNOLOGIES INC72000–2008
MOSEL VITELIC INC22000–2003
INFINEON TECHNOLOGIES INC12003
SIEMENS AG12000
Locations
LocationPatentsSpan
Hsinchu, TW72000–2008