Inventor
Ming-Shang Chen
Inventor
Hsinchu, TW
Overview
Patents· 33 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices37%
H10DInorganic electric semiconductor devices22%
G11CStatic stores17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h108%
G06FElectric digital data processing3%
H01LSemiconductor devices3%
PatentTitleYear
RE046970Diode-less array for one-time programmable memory20189,036,393'Diode-less array for one-time programmable memory'20158,593,850'Diode-less array for one-time programmable memory'20138,552,528'Diode-less array for one-time programmable memory'20138,466,508'Non-volatile memory structure including stress material between stacked patterns'20138,183,106'Apparatus and associated method for making a floating gate memory device with buried diffusion dielectric structures and increased gate coupling ratio'20127,971,177'Design tool for charge trapping memory using simulated programming operations'20117,889,556'Flash memory having insulating liners between source/drain lines and channels'20117,888,272'Methods for manufacturing memory and logic devices using the same process without the need for additional masks'20117,847,336'Method of fabricating NAND-type flash EEPROMS without field oxide isolation'20107,776,690'Method of forming a contact on a semiconductor device'20107,668,010'Flash memory having insulating liners between source/drain lines and channels'20107,666,784'Methods of trench and contact formation in memory cells'20107,592,036'Method for manufacturing NAND flash memory'20097,486,534'Diode-less array for one-time programmable memory'20097,435,648'Methods of trench and contact formation in memory cells'20087,399,674'Method of fabricating NAND-type flash EEPROM without field oxide isolation'20087,271,062'Non-volatile memory cell and fabricating method thereof and method of fabricating non-volatile memory'20077,214,983'Non-volatile memory and fabricating method thereof'20077,067,374'Manufacturing methods and structures of memory device'20066,960,506'Method of fabricating a memory device having a self-aligned contact'20056,723,646'Method for controlling and monitoring a chemical mechanical polishing process'20046,677,211'Method for eliminating polysilicon residue'20046,642,118'Method for eliminating polysilicon residue by fully converting the polysilicon into silicon dioxide'20036,620,714'Method for reducing oxidation encroachment of stacked gate layer'20036,614,687'Current source component with process tracking characteristics for compact programmed Vt distribution of flash EPROM'20036,562,682'Method for forming gate'20036,552,360'Method and circuit layout for reducing post chemical mechanical polishing defect count'20036,363,013'Auto-stopped page soft-programming method with voltage limited component'20026,166,955'Apparatus and method for programming of flash EPROM memory'20006,131,134'Hot plug-and-play converter of a universal serial bus interface'20006,031,766'Method and circuit for substrate current induced hot e-injection (SCIHE) approach for V.sub.T convergence at low V.sub.cc voltage'20005,912,845'Method and circuit for substrate current induced hot e.sup.- injection (SCIHE) approach for V.sub.T convergence at low V.sub.CC voltage'1999Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1999–2018Patents assigned to MACRONIX INT CO LTD (31)· patent assignee history
1999–2000Based in Hsingchu, TW· patent location history
2000–2018Based in Hsinchu, TW· patent location history
2000Based in Taipei, TW· patent location history
2012–2013Patents assigned to CHEN MING SHANG (2)· patent assignee history
2013Patents assigned to HAN TZUNG-TING (3)· patent assignee history
2013Patents assigned to CHEN KUAN-FU (2)· patent assignee history
2013Patents assigned to CHEN MING-SHANG (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MACRONIX INT CO LTD | 31 | 1999–2018 |
| HAN TZUNG-TING | 3 | 2013 |
| CHEN KUAN-FU | 2 | 2013 |
| CHEN MING SHANGself | 2 | 2012–2013 |
| CHEN MING-SHANGself | 2 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 30 | 2000–2018 |
| Hsingchu, TW | 2 | 1999–2000 |
| Taipei, TW | 1 | 2000 |