Inventor

Ian A. Young

Inventor
Portland, OR, US

Overview

163→
Patents
1982–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 163 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices15%
G11CStatic stores14%
H03KPulse technique9%
H10BElectronic memory devices9%
H10DInorganic electric semiconductor devices9%
H10NElectric solid-state devices not otherwise provided for8%
G06FElectric digital data processing7%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
H03LAutomatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses3%
G02BOptical elements, systems or apparatus3%
PatentTitleYear
11,127,785Cross-point magnetic random access memory with piezoelectric selector202111,114,144Magnetoelectric spin orbit logic with paramagnets202111,107,908Transistors with metal source and drain contacts including a Heusler alloy202111,069,609Techniques for forming vias and other interconnects for integrated circuit structures202111,063,131Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineering202111,062,752Spin orbit torque memory devices and methods of fabrication202111,061,646Compute in memory circuits with multi-Vdd arrays and/or analog multipliers202111,056,593Semiconductor devices with metal contacts including crystalline alloys202111,048,434Compute in memory circuits with time-to-digital computation202111,038,099Perpendicular magnetoelectric spin orbit logic202111,037,614Imprint-free write driver for ferroelectric memory202111,016,701Oscillator circuitry to facilitate in-memory computation202111,004,868Memory field-effect transistors and methods of manufacturing the same202110,998,405Low-defect graphene-based devices and interconnects202110,998,495Magnetostrictive stack and corresponding bit-cell202110,998,339One transistor and ferroelectric FET based memory cell202110,956,813Compute-in-memory circuit having a multi-level read wire with isolated voltage distributions202110,957,844Magneto-electric spin orbit (MESO) structures having functional oxide vias202110,944,399Multi-level spin logic202110,923,188Macro storage cell composed of multiple storage devices each capable of storing more than two states202110,910,556Magnetic and spin logic devices based on Jahn-Teller materials202110,901,486Configurable interconnect apparatus and method202110,886,265Integrated circuit device with a two-dimensional semiconductor material and a dielectric material that includes fixed charges202110,884,957Pipeline circuit architecture to provide in-memory computation functionality202110,885,963Ferroelectric memory-based synapses202110,886,286Vertical memory control circuitry located in interconnect layers202110,877,752Techniques for current-sensing circuit design for compute-in-memory202010,860,682Binary, ternary and bit serial compute-in-memory circuits202010,861,861Memory including a perovskite material202010,831,446Digital bit-serial multi-multiply-and-accumulate compute in memory202010,832,761Polarization gate stack SRAM202010,825,509Full-rail digital read compute-in-memory circuit202010,777,250Save-restore circuitry with metal-ferroelectric-metal devices202010,749,104Combinatorial magneto electric spin orbit logic202010,748,603In-memory multiply and accumulate with global charge-sharing202010,748,602Nonvolatile SRAM202010,734,378Transistor threshold voltage variation optimization202010,720,438Memory array with ferroelectric elements202010,720,504Transistor with dynamic threshold voltage for low-leakage standby and high speed active mode202010,707,846Tunnel field-effect transistor (TFET) based high-density and low-power sequential202010,705,967Programmable interface to in-memory cache processor202010,679,782Spin logic with spin hall electrodes and charge interconnects202010,651,182Three-dimensional ferroelectric NOR-type memory202010,642,922Binary, ternary and bit serial compute-in-memory circuits202010,636,840Quaternary spin hall memory202010,622,132Spin logic device with high spin injection efficiency from a matched spin transfer layer202010,608,167Spin logic with magnetic insulators switched by spin orbit coupling202010,600,957Method for fabricating spin logic devices from in-situ deposited magnetic stacks202010,573,385Ferroelectric based memory cell with non-volatile retention202010,565,138Memory device with multiple memory arrays to facilitate in-memory computation202010,559,349Polarization gate stack SRAM202010,553,268Methods and apparatus to perform complex number generation and operation on a chip202010,553,694Transistors with temperature compensating gate structures202010,535,770Scaled TFET transistor formed using nanowire with surface termination202010,522,683Transistors with ballistic or quasi-ballistic carrier behavior and low resistance in source and drain nodes201910,483,455Magnetic element for memory and logic201910,483,026Metallic spin super lattice for logic and memory devices201910,457,548Integrating MEMS structures with interconnects and vias201910,439,599Non-boolean associative processor degree of match and winner take all circuits201910,416,217On-chip test circuit for magnetic random access memory (MRAM)201910,355,005Semi-volatile embedded memory with between-fin floating-gate device and method201910,347,830Non-volatile register file including memory cells having conductive oxide memory element201910,331,582Write congestion aware bypass for non-volatile memory, last level cache (LLC) dropping from write queue responsive to write queue being full and read queue threshold wherein the threshold is derived from latency of write to LLC and main memory retrieval time201910,333,523Exclusive-OR logic device with spin orbit torque effect201910,320,404Coupled spin hall nano oscillators with tunable strength201910,261,923Configurable interconnect apparatus and method201910,263,036Strain assisted spin torque switching spin transfer torque memory201910,236,345Field effect transistor having a Fermi filter between a source and source contact thereof201910,170,185Hybrid memory and MTJ based MRAM bit-cell and array201910,128,356P-tunneling field effect transistor device with pocket201810,062,731Spin-orbit logic with charge interconnects and magnetoelectric nodes201810,043,971Non-volatile register file including memory cells having conductive oxide memory element20189,997,227Non-volatile ferroelectric logic with granular power-gating20189,985,611Tunnel field-effect transistor (TFET) based high-density and low-power sequential20189,947,805Nanowire-based mechanical switching device20189,927,211'Cloaking system with waveguides'20189,911,835'Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs'20189,871,106'Heterogeneous pocket for tunneling field effect transistors (TFETs)'20189,847,475Magnetic domain wall logic devices and interconnect20179,842,643'Apparatuses, methods, and systems for dense circuitry using tunnel field effect transistors'20179,741,832'Tunneling field effect transistors with a variable bandgap channel'20179,712,171'Clocked all-spin logic circuit'20179,711,215'Apparatus and method to optimize STT-MRAM size and write error rate'20179,620,188'MTJ spin hall MRAM bit-cell and array'20179,583,602'Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs'20179,583,566'Reduced scale resonant tunneling field effect transistor'20179,577,060'Piezoresistive resonator with multi-gate transistor'20179,570,139'Magnetic state element and circuits'20179,559,698'Spintronic logic element'20179,526,285'Flexible computing fabric'20169,490,780'Apparatuses, methods, and systems for dense circuitry using tunnel field effect transistors'20169,460,768'Cross point array MRAM having spin hall MTJ devices'20169,437,298'Self-storing and self-restoring non-volatile static random access memory'20169,412,872'N-type and P-type tunneling field effect transistors (TFETs)'20169,391,262'Nanomagnetic devices switched with a spin hall effect'20169,379,712'High speed precessionally switched magnetic logic'20169,362,074'Nanowire-based mechanical switching device'20169,310,565'Cloaking system with waveguides'20169,305,629'Integrated capacitor based power distribution'20169,294,035'Multigate resonant channel transistor'20169,287,576'Self-powered internal medical device'20169,281,467'Spin hall effect memory'20169,209,288'Reduced scale resonant tunneling field effect transistor'20159,195,787'Methods and apparatus for modeling and simulating spintronic integrated circuits'20159,136,848'High speed precessionally switched magnetic logic'20159,070,468'Magnetic state element and circuits'20158,988,109'High speed precessionally switched magnetic logic'20158,933,522'Repeated spin current interconnects'20158,933,521'Three-dimensional magnetic circuits including magnetic connectors'20158,890,120'Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETs'20148,294,858'Integrated photovoltaic cell for display device'20128,274,339'Automatic frequency control architecture with digital temperature compensation'20127,999,586'Digital phase locked loop with closed loop linearization technique'20117,742,910'Mechanism for estimating and controlling di/dt-induced power supply voltage variations'20107,729,393'Surface emitting laser with an integrated absorber'20107,619,452'Mutual charge cancelling sample-reset loop filter for phase locked loops'20097,593,496'Phase interpolator'20097,583,151'VCO amplitude control'20097,501,869'Low power, low phase jitter, and duty cycle error insensitive clock receiver architecture and circuits for source synchronous digital data communication'20097,501,904'Low power and duty cycle error free matched current phase locked loop'20097,418,163'Optoelectrical package'20087,327,174'Fast locking mechanism for delay lock loops and phase lock loops'20087,236,920'Mechanism for estimating and controlling di/dt-induced power supply voltage variations'20077,068,892'Passively aligned optical-electrical interface'20067,049,704'Flip-chip package integrating optical and electrical devices and coupling to a waveguide on a board'20067,035,785'Mechanism for estimating and controlling di/dt-induced power supply voltage variations'20067,026,883'Feedback loop for LC VCO'20066,968,104'Variable bending radius H-tree distribution device'20056,876,794'Multi-waveguide layer H-tree distribution device'20056,856,129'Current probe device having an integrated amplifier'20056,760,801'Ground referenced voltage source input/output scheme for multi-drop bus'20046,754,407'Flip-chip package integrating optical and electrical devices and coupling to a waveguide on a board'20046,670,833'Multiple VCO phase lock loop architecture'20036,650,161'Clock distribution network having regulated power supply'20036,636,976'Mechanism to control di/dt for a microprocessor'20036,556,471'VDD modulated SRAM for highly scaled, high performance cache'20036,538,497'On-chip power supply boost for voltage droop reduction'20036,512,861'Packaging and assembly method for optical coupling'20036,407,600'Method and apparatus for providing a start-up control voltage'20026,303,464'Method and structure for reducing interconnect system capacitance through enclosed voids in a dielectric layer'20016,229,861'Clock distribution network utilizing local deskewing clock generator circuitry'20016,172,937'Multiple synthesizer based timing signal generation scheme'20016,125,217'Clock distribution network'20006,081,141'Hierarchical clock frequency domains for a semiconductor device'20006,075,908'Method and apparatus for optically modulating light through the back side of an integrated circuit die'20006,064,223'Low leakage circuit configuration for MOSFET circuits'20005,446,867'Microprocessor PLL clock circuit with selectable delayed feedback'19955,412,349'PLL clock generator integrated with microprocessor'19955,300,829'BiCMOS circuit with negative V.sub.BE protection'19945,280,605'Clock speed limiter for microprocessor'19945,274,337'Clock speed limiter for a microprocessor by comparing clock signal with a predetermined frequency'19935,247,479'Current sensing amplifier for SRAM'19935,235,549'Semiconductor device with apparatus for performing electrical tests on single memory cells'19935,113,096'BiCMOS circuit'19925,111,077'BiCMOS noninverting buffer and logic gates'19925,049,765'BiCMOS noninverting buffer and logic gates'19914,888,503'Constant current biased common gate differential sense amplifier'19894,796,230'Folded-cascode configured differential current steering column decoder circuit'19894,710,647'Substrate bias generator including multivibrator having frequency independent of supply voltage'19874,658,160'Common gate MOS differential sense amplifier'19874,379,267'Low power differential amplifier'19834,338,571'Low sensitivity switched-capacitor ladder filter using monolithic MOS chip'19824,316,106'Dynamic ratioless circuitry for random logic applications'1982

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1982–1983Based in Farmers Branch, TX, US· patent location history
1987–2021Patents assigned to INTEL CORP (158)· patent assignee history
1987–2021Based in Portland, OR, US· patent location history
2012–2020Patents assigned to YOUNG IAN A (14)· patent assignee history
2014–2017Patents assigned to CHAUDHRY ANURAG (3)· patent assignee history
2015–2020Patents assigned to MANIPATRUNI SASIKANTH (9)· patent assignee history
2015–2017Patents assigned to NIKONOV DMITRI E (8)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
INTEL CORP1581987–2021
YOUNG IAN Aself142012–2020
MANIPATRUNI SASIKANTH92015–2020
NIKONOV DMITRI E82015–2017
CHAUDHRY ANURAG32014–2017
Locations
LocationPatentsSpan
Portland, OR, US1601987–2021
Farmers Branch, Texas, US31982–1983