Error correction code circuits, semiconductor memory devices and memory systems

This application is a reissue application for U.S. Pat. No. 10,922,171 issued on Feb. 16, 2021 on U.S. Ser. No. 16/441,287 filed Jun. 14, 2019, which claims priority under 35 U.S.C. § 119 to Korean Patent Application No. 10-2018-0162883, filed on Dec. 17, 2018 in the Korean Intellectual Property Office, the disclosure of each of which is incorporated by reference herein in its entirety.

1. Technical Field

Example embodiments relate to memory devices, and more particularly to error correction code (ECC) circuits of semiconductor memory devices, semiconductor memory devices and/or memory systems.

2. Discussion of the Related Art

Semiconductor memory devices may be classified into non-volatile memory devices such as flash memory devices and volatile memory devices such as DRAMs. High speed operation and cost efficiency of DRAMs make it possible for DRAMs to be used for system memories. Due to the continuing shrinkage in fabrication design rule of DRAMs, bit errors of memory cells in the DRAMs may rapidly increase and yield of the DRAMs may decrease.

Some example embodiments provide an error correction code (ECC) circuit of a semiconductor memory device, capable of enhancing error correction capability and capable of using on-chip ECC efficiently.

Some example embodiments provide a semiconductor memory device capable of enhancing error correction capability and capable of using on-chip ECC efficiently.

Some example embodiments provide a memory system capable of enhancing error correction capability and capable of using on-chip ECC efficiently.

According to some example embodiments, an ECC circuit of a semiconductor memory device includes a syndrome generation circuit configured to generate a syndrome based on a message and first parity bits in a codeword read from a memory cell array by using one of a first parity check matrix and a second parity check matrix, in response to a decoding mode signal, and a correction circuit configured to receive the codeword, correct at least a portion of (t1+t2) error bits in the codeword, based on the syndrome, wherein t1 and t2 are natural numbers, and output a corrected message.

According to some example embodiments, a semiconductor memory device includes a memory cell array including a plurality of memory cells coupled to a plurality of word-lines and a plurality of bit-lines, an error correction code (ECC) circuit configured to generate a codeword by performing ECC encoding on a message received from a memory controller based on a generation matrix, generate a syndrome based on the message and first parity bits in a read codeword from the memory cell array, correct at least a portion of (t1+t2) error bits in the read codeword based on the syndrome, wherein t1 and t2 are natural numbers, and output a corrected message, and a control logic circuit configured to control the ECC circuit based on a command and an address received from the memory controller.

According to some example embodiments, a memory system includes a semiconductor memory device, and a memory controller configured to control the semiconductor memory device, wherein the semiconductor memory device includes, a memory cell array including a plurality of memory cells coupled to a plurality of word-lines and a plurality of bit-lines, an error correction code (ECC) circuit configured to, generate a codeword by performing ECC encoding on a message received from the memory controller based on a generation matrix, generate a syndrome based on the message and first parity bits in a read codeword from the memory cell array, correct at least a portion of (t1+t2) error bits in the read codeword based on the syndrome, wherein t1 and t2 are natural numbers, and output a corrected message, and a control logic circuit configured to control the ECC circuit based on a command and an address received from the memory controller.

Accordingly, the semiconductor memory device obtains code information of a system ECC engine having t1-bit error correction capability, the semiconductor memory device having t2-bit error correction capability may correct (t1+t2) error bits by selectively using a parity check matrix associated with the code information of the system ECC engine when the semiconductor memory device performs ECC decoding. Therefore, the semiconductor memory device may enhance error correction capability of on-chip ECC engine and may use on-chip ECC engine efficiently.

Illustrative, non-limiting example embodiments will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings.

FIG. 1 is a block diagram illustrating a memory system according to some example embodiments.

FIG. 2 is block diagram illustrating the memory controller in the memory system of FIG. 1 according to some example embodiments.

FIG. 3 is a block diagram illustrating an example of the system ECC engine in FIG. 2 according to some example embodiments.

FIG. 4 is a diagram for describing on-chip ECC levels according to data bits and parity bits.

FIG. 5 is a block diagram illustrating the semiconductor memory device in the memory system of FIG. 1 according to some example embodiments.

FIG. 6 is a circuit diagram of an example implementation of the memory cell shown in FIG. 5 .

FIG. 7 illustrates an example of the first bank array in the semiconductor memory device of FIG. 5 .

FIG. 8 is a block diagram illustrating an example of the ECC engine in the semiconductor memory device of FIG. 5 according to some example embodiments.

FIG. 9 illustrates an example of the first generation matrix stored in the memory in the system ECC engine of FIG. 3 .

FIG. 10 illustrates an example of the system parity check matrix stored in the memory in the system ECC engine of FIG. 3 .

FIG. 11 illustrates an example of the second generation matrix stored in the memory in the ECC engine of FIG. 8 .

FIG. 12 illustrates an example of the first parity check matrix stored in the memory in the ECC engine of FIG. 8 .

FIG. 13 illustrates an example of the second parity check matrix stored in the memory in the ECC engine of FIG. 8 .

FIG. 14 illustrates an example configuration of the codeword that the ECC decoder outputs in the ECC engine of FIG. 8 .

FIG. 15 is a block diagram illustrating an example of the ECC decoder in FIG. 8 according to some example embodiments.

FIG. 16 illustrates the syndrome generation circuit in FIG. 15 in the first decoding mode.

FIG. 17 illustrates the syndrome generation circuit in FIG. 15 in the second decoding mode.

FIG. 18 is a table for explaining values in which both of the first decoding mode and the second decoding mode are possible according to correctable error bits in the first decoding mode and the second decoding mode.

FIG. 19 is a flow chart illustrating a method of operating a semiconductor memory device according to some example embodiments.

FIG. 20 is a flow chart illustrating the first decoding operation in FIG. 19 .

FIG. 21 is a flow chart illustrating the second ECC decoding operation in FIG. 19 .

FIG. 22 is a flow chart illustrating a method of operating a memory system according to some example embodiments.

FIG. 23 is a block diagram illustrating a semiconductor memory device according to some example embodiments.

FIG. 24 is a cross-sectional view of a 3D chip structure employing the semiconductor memory device of FIG. 23 according to some example embodiments.

FIG. 25 is a block diagram illustrating a memory system according to some example embodiments.

FIG. 26 is a configuration diagram illustrating a semiconductor package including the memory device according to some example embodiments.

Various example embodiments will be described more fully hereinafter with reference to the accompanying drawings, in which some example embodiments are shown.

FIG. 1 is a block diagram illustrating a memory system according to some example embodiments.

Referring to FIG. 1 , a memory system 10 may include a memory controller 100 and a semiconductor memory device 200 .

The memory controller 100 may control an overall operation of the memory system 10 . The memory controller 100 may control an overall data exchange between a host and the semiconductor memory device 200 . For example, the memory controller 100 may write data in the semiconductor memory device 200 or read data from the semiconductor memory device 200 in response to a request from the host. In addition, the memory controller 100 may issue operation commands to the semiconductor memory device 200 for controlling the semiconductor memory device 200 .

The memory controller 100 transmits a command CMD and an address ADDR to the semiconductor memory device 200 and exchanges a message MSG with the semiconductor memory device 200 . The memory controller 100 transmits a configuration flag signal CFL to the semiconductor memory device 200 .

In some example embodiments, the semiconductor memory device 200 includes dynamic memory cells such as a dynamic random access memory (DRAM).

The memory controller 100 may include a system error correction code (ECC) engine 130 and the semiconductor memory device 200 includes an ECC engine 400 and a memory cell array 300 .

The system ECC engine 130 performs a first ECC encoding on a data received from the host to generate the message MSG and transmit the message MSG to the semiconductor memory device 200 , as a coded message CM including the link parity and the message MSG. In addition, the system ECC engine 130 performs an ECC decoding on the message MSG provided from the semiconductor memory device 200 to recover data and provides the data to the host. The system ECC engine 130 may use a first generation matrix. In some example embodiments, the first generation matrix may represent a single error correction (SEC) code.

The ECC engine 400 performs an ECC encoding on the message MSG based on a second generation matrix to generate first parity bits and stores a codeword including the message MSG and the first parity bits in a target page in the memory cell array 300 . The ECC engine 400 may be referred to as an ECC circuit or an error correction circuit.

The ECC engine 400 corrects at least a portion of (t1+t2) error bits in a read codeword read from the target page by using the message and the first parity bits in the read codeword and transmits a corrected message to the memory controller 100 . Here, t1 and t2 are natural numbers, respectively. Here, t1 represents a number of error bits which the system ECC engine 130 is capable of correcting and t2 represents a number of error bits which the ECC engine 400 is capable of correcting.

The memory controller 100 may transmit the configuration flag signal CFL indicating information on the first generation matrix to the semiconductor memory device 200 during a power-up sequence of the semiconductor memory device 200 . The semiconductor memory device 200 receives the configuration flag signal CFL and may obtain information on the first generation matrix which is associated with generation of the first parity bits included in the message MSG provided from the memory controller 100 .

FIG. 2 is block diagram illustrating the memory controller in the memory system of FIG. 1 according to some example embodiments.

Referring to FIG. 2 , the memory controller 100 includes a central processing unit (CPU) 110 , a host interface 120 , a data register 125 , the system ECC engine 130 , a flag buffer 180 , a command buffer 190 and/or an address buffer 195 . The system ECC engine 130 includes an ECC encoder 140 and/or an ECC decoder 150 .

The host interface 120 receives a request REQ and data DTA from the host and provides the data DTA to the data register 125 . The data register 125 continuously (or sequentially) outputs the data DTA to the system ECC engine 130 .

The ECC encoder 140 performs a first ECC encoding on the data DTA by using the first generation matrix to generate a message MSG 1 and output the message.

The ECC decoder 150 performs an ECC decoding on a message MSG 2 to recover the data DTA and provides the data DTA to the CPU 110 .

The CPU 110 receives the data DTA and controls the flag buffer 180 to transmit the configuration flag signal CFL to the semiconductor memory device 200 .

The command buffer 190 stores the command CMD corresponding to the request REQ and transmits the command CMD to the semiconductor memory device 200 under control of the CPU 110 . The address buffer 195 stores the address ADDR and transmits the address ADDR to the semiconductor memory device 200 under control of the CPU 110 .

FIG. 3 is a block diagram illustrating an example of the system ECC engine in FIG. 2 according to some example embodiments.

Referring to FIG. 3 , the system ECC engine 130 includes a memory 135 , the ECC encoder 140 and/or the ECC decoder 150 .

The memory 135 may store a first generation matrix GM 1 that implements a first ECC and a system parity check matrix. The system parity check matrix H 1 may be an SEC code or a single error correction-double error detection (SEC-DED) code. Therefore, the ECC decoder 150 may correct one error bit in the message MSG 2 or may detect two error bits in the message MSG 2 .

FIG. 4 is a diagram for describing on-chip ECC levels according to data bits and parity bits.

In FIG. 4 , SEC represents single error correction, DED represents double error detection and DEC represents double error correction. FIG. 4 illustrates parity bits and corresponding size overheads of the parity bits (PARITY O/H). The parity bits correspond to a Hamming code or an extended Hamming code. The size overhead of the parity bits correspond to a ratio of the parity bits of the parity data corresponding to the write data to the data bits of the write data.

As illustrated in FIG. 4 , as the parity bit number is increased with respect to the same data bit number, that is, as the ratio of the parity bit number to the data bit number is increased, capability of error detection and correction is increased. As the data bit number is increased with respect to the same capability of error detection and correction, the corresponding parity bit number is increased but the ratio of the parity bit number to the data bit number is decreased.

As such, the error detection capability and/or the error correction capability may be increased as the ratio of the parity bit number to the corresponding data bit number is increased. As a result, the on-chip ECC level may be raised as the ratio of the parity bit number to the corresponding data bit number is increased.

Memory resources may be wasted and a size of the semiconductor memory device may be increased if the on-chip ECC level is set higher than necessary. In contrast, the error detection and correction capability may be degraded and performance of the semiconductor memory device may be degraded if the on-chip ECC level is set lower than necessary.

FIG. 5 is a block diagram illustrating the semiconductor memory device in the memory system of FIG. 1 according to some example embodiments.

Referring to FIG. 5 , the semiconductor memory device 200 includes a control logic circuit 210 , an address register 220 , a bank control logic 230 , a row address multiplexer 240 , a column address latch 250 , a row decoder 260 , a column decoder 270 , the memory cell array 300 , a sense amplifier unit 285 , an input/output (I/O) gating circuit 290 , a data input/output (I/O) buffer 295 , a refresh counter 245 , the ECC engine 400 , and/or a flag buffer 287 .

The memory cell array 300 includes first through eighth bank arrays 310 ˜ 380 . The row decoder 260 includes first through eighth bank row decoders 260 a˜ 260 h respectively coupled to the first through eighth bank arrays 310 ˜ 380 , the column decoder 270 includes first through eighth bank column decoders 270 a˜ 270 h respectively coupled to the first through eighth bank arrays 310 ˜ 380 , and the sense amplifier unit 285 includes first through eighth bank sense amplifiers 285 a˜ 285 h respectively coupled to the first through eighth bank arrays 310 ˜ 380 .

The first through eighth bank arrays 310 ˜ 380 , the first through eighth bank row decoders 260 a˜ 260 h, the first through eighth bank column decoders 270 a˜ 270 h and first through eighth bank sense amplifiers 285 a˜ 285 h may form first through eighth banks. Each of the first through eighth bank arrays 310 ˜ 380 includes a plurality of memory cells MC coupled to word-lines WL and bit-lines BTL.

The address register 220 receives an address ADDR including a bank address BANK_ADDR, a row address ROW_ADDR and a column address COL_ADDR and the command CMD from the memory controller 100 .

The address register 220 may provide the received bank address BANK_ADDR to the bank control logic 230 , may provide the received row address ROW_ADDR to the row address multiplexer 240 , and may provide the received column address COL_ADDR to the column address latch 250 .

The bank control logic 230 may generate bank control signals in response to the bank address BANK_ADDR. One of the first through eighth bank row decoders 260 a˜ 260 h corresponding to the bank address BANK_ADDR may be activated in response to the bank control signals, and one of the first through eighth bank column decoders 270 a˜ 270 h corresponding to the bank address BANK_ADDR may be activated in response to the bank control signals.

The row address multiplexer 240 may receive the row address ROW_ADDR from the address register 220 , and may receive a refresh row address REF_ADDR from the refresh counter 245 . The row address multiplexer 240 may selectively output one of the row address ROW_ADDR the refresh row address REF_ADDR as a row address RA. The row address RA that is output from the row address multiplexer 240 may be applied to the first through eighth bank row decoders 260 a˜ 260 h.

The activated one of the first through eighth bank row decoders 260 a˜ 260 h may decode the row address RA that is output from the row address multiplexer 240 , and may activate a word-line corresponding to the row address RA. For example, the activated bank row decoder may apply a word-line driving voltage to the word-line corresponding to the row address RA.

The column address latch 250 may receive the column address COL_ADDR from the address register 220 , and may temporarily store the received column address COL_ADDR. In some example embodiments, in a burst mode, the column address latch 250 may generate column addresses that increment from the received column address COL_ADDR. The column address latch 250 may apply the temporarily stored or generated column address to the first through eighth bank column decoders 270 a˜ 270 h.

The activated one of the first through eighth bank column decoders 270 a˜ 270 h may decode the column address COL_ADDR that is output from the column address latch 250 , and may control the I/O gating circuit 290 in order to output data corresponding to the column address COL_ADDR.

The I/O gating circuit 290 includes a circuitry for gating input/output data. The I/O gating circuit 290 further includes read data latches for storing data that is output from the first through eighth bank arrays 310 ˜ 380 , and write drivers for writing data to the first through eighth bank arrays 310 ˜ 380 .

Codeword CW to be read from one bank array of the first through eighth bank arrays 310 ˜ 380 may be sensed by a sense amplifier coupled to the one bank array from which the data is to be read, and may be stored in the read data latches. The codeword CW stored in the read data latches is ECC-decoded by the ECC engine 400 and may be provided to the memory controller 100 via the data I/O buffer 295 .

Message MSG to be written in one bank array of the first through eighth bank arrays 310 ˜ 380 may be provided to the data I/O buffer 295 from the memory controller 100 . The message MSG is provided to the ECC engine 400 . The ECC engine 400 performs an ECC encoding on the message MSG to generate first parity bits and provides the I/O gating circuit 290 with codeword CW including the message MSG and the first parity bits. The I/O gating circuit 290 may write the codeword CW in a target page in the one bank array through the write drivers.

The ECC engine 400 may generate syndrome based on the message MSG and the first parity bits in the codeword read from the target page, may correct at least a portion of (t1+t2) error bits in the codeword and may provide a corrected message to the data I/O buffer 295 . The ECC engine 400 may correct (t1+t2) error bits by performing a first ECC decoding in a first decoding mode and may correct t2 error bit by performing a second ECC decoding in a second decoding mode. For example, when each of t1 and t2 is one, the ECC engine 400 may correct two error bits in the first decoding mode and may correct one error bit in the second decoding mode.

The flag buffer 287 receives the configuration flag signal CFL and provides the configuration flag signal CFL to the ECC engine 400 .

The control logic circuit 210 may control operations of the semiconductor memory device 200 . For example, the control logic circuit 210 may generate control signals for the semiconductor memory device 200 in order to perform a write operation or a read operation. The control logic circuit 210 may include a command decoder 211 that decodes the command CMD received from the memory controller 100 and a mode register 212 that sets an operation mode of the semiconductor memory device 200 .

For example, the command decoder 211 may generate the control signals corresponding to the command CMD by decoding a write enable signal, a row address strobe signal, a column address strobe signal, a chip select signal, etc. The control logic circuit 210 may generate a first control signal CTL 1 to control the I/O gating circuit 290 and a second control signal CTL 2 to control the ECC engine 400 .

FIG. 6 is a circuit diagram of an example implementation of the memory cell shown in FIG. 5 .

Referring to FIG. 6 , a memory cell MC includes a cell capacitor CC and a transistor CT. The transistor CT may be a selection element (or switching element) that connects/disconnects the cell capacitor CC to/from bit-line BTL according to a voltage of a word-line WL. The transistor CT may be coupled between the cell capacitor CC, a word-line WL and a bit-line BTL, and the cell capacitor CC may be coupled between the transistor CT and a plate voltage (not illustrated).

FIG. 6 illustrates the memory cell MC is implemented with a dynamic memory cell. However, the memory cell MC may be implemented with a resistive memory cell.

FIG. 7 illustrates an example of the first bank array in the semiconductor memory device of FIG. 5 .

Referring to FIG. 7 , the first bank array 310 includes a plurality of word-lines WL 1 ˜WLr (r is a natural number greater than two), a plurality of bit-lines BTL 1 ˜BTLj (j is a natural number greater than two), and/or a plurality of memory cells MCs disposed near intersections between the word-lines WL 1 ˜WLr and the bit-lines BTL 1 ˜BTLj. In some example embodiments, each of the plurality of memory cells MCs may include a dynamic random access memory (DRAM) cell structure. The plurality of word-lines WL 1 ˜WLr to which the plurality of memory cells MCs are connected may be defined as rows of the first bank array 310 and the plurality of bit-lines BTL 1 ˜BTLj to which the plurality of memory cells MCs are connected may be defined as columns of the first bank array 310 .

FIG. 8 is a block diagram illustrating an example of the ECC engine in the semiconductor memory device of FIG. 5 according to some example embodiments.

Referring to FIG. 8 , the ECC engine 400 includes a memory 410 , an ECC encoder 420 , an ECC decoder 430 and/or a mode selector 415 .

The memory 410 stores a second generation matrix GM 2 , a first parity check matrix H 21 and/or a second parity check matrix H 22 . The ECC encoder 420 is connected to the memory 410 and performs an ECC encoding by using the second generation matrix GM 2 and the ECC decoder 430 is connected to the memory 410 and the ECC decoder 430 performs an ECC decoding by using one of the first parity check matrix H 21 and the second parity check matrix H 22 .

The ECC encoder 420 performs an ECC encoding on the message MSG to generate first parity bits PRT 1 by using the second generation matrix GM 2 in a write operation of the semiconductor memory device 200 . The ECC encoder 420 provides the I/O gating circuit 290 with the codeword CW including the message MSG and the first parity bits PRT 1 .

The mode selector 415 may provide the ECC decoder 430 with a decoding mode signal DMS designating one of a first decoding mode and a second decoding mode in response to the second control signal CTL 2 . The control logic circuit 210 may provide the mode selector 415 with the second control signal CTL 2 designating one of the first decoding mode and the second decoding mode, based on power consumption of the semiconductor memory device 200 and data credibility.

The memory 410 receives the configuration flag signal CFL and stores information associated with the first generation matrix GM 1 and the system parity check matrix H 1 which the system ECC engine 130 uses

The ECC decoder 430 receives the codeword CW in a read operation of the semiconductor memory device 200 , performs one of a first ECC decoding and a second ECC decoding based on message bits of the message MSG and the first parity bits PRT 1 in the codeword CW and corrects at least a portion of (t1+t2) error bits in the codeword CW, in response to a decoding mode signal DMS.

If the decoding mode signal DMS designates the first decoding mode, the ECC decoder 430 may correct (t1+t2) error bits in the codeword CW by using the first parity check matrix H 21 . If the decoding mode signal DMS designates the second decoding mode, the ECC decoder 430 may correct t2 error bit in the codeword CW by using the second parity check matrix H 22 .

As will be described below, the first parity check matrix H 21 may include the system parity check matrix H 1 which the system ECC engine 130 uses, as a part of the first parity check matrix H 21 , the ECC decoder 430 may correct (t1+t2) error bits in the codeword CW in the first decoding mode.

In some example embodiments, the mode selector 415 may be disposed outside of the ECC engine 400 .

FIG. 9 illustrates an example of the first generation matrix stored in the memory in the system ECC engine of FIG. 3 .

Referring to FIGS. 3 and 9 , the first generation matrix GM 1 may include a matrix having 21*26 elements. That is, the first generation matrix GM 1 includes 21 row vectors and 26 column vectors. The first generation matrix GM 1 may be generated based on a first generation polynomial g1(x). g1(x) may be represented by x 5 +x 2 +x 1 . Therefore, each of the row vectors in the first generation matrix GM 1 may include three ‘1’s.

If the data DTA in FIG. 3 is represented as m=[m 0 m 1 . . . m 20 ], the message MSG is represented as mGM 1 =x and x is represented as x=[x 0 x 1 . . . x 25 ].

FIG. 10 illustrates an example of the system parity check matrix stored in the memory in the system ECC engine of FIG. 3 .

Referring to FIGS. 3 and 10 , the system parity check matrix H 1 may include a matrix having 5*26 elements. That is, the system parity check matrix H 1 includes 5 row vectors and 26 column vectors.

The system parity check matrix H 1 may correct t1 error bit.

FIG. 11 illustrates an example of the second generation matrix stored in the memory in the ECC engine of FIG. 8 .

Referring to FIGS. 8 and 11 , the second generation matrix GM 2 may include a matrix having 26*31 elements. That is, the second generation matrix GM 2 includes 26 row vectors and 31 column vectors.

The second generation matrix GM 2 may be generated based on a second generation polynomial g2(x). g2(x) may be represented by x 5 +x 4 +x3+x 2 +x 1 . Therefore, each of the row vectors in the second generation matrix GM 1 may include five ‘1’s.

If the message MSG in FIG. 8 is represented as x=[x 0 x 1 . . . x 25 ], the codeword CW is represented as xGM 2 =c and c is represented as c=[c 0 c1 . . . c 30 ].

FIG. 12 illustrates an example of the first parity check matrix stored in the memory in the ECC engine of FIG. 8 .

Referring to FIGS. 8 and 12 , the first parity check matrix H 21 may include a matrix having 10*31 elements. That is, the first parity check matrix H 21 includes 10 row vectors and 31 column vectors.

The first parity check matrix H 21 may include a first sub matrix SH 1 , a second sub matrix SH 2 and a third sub matrix SH 3 . The first sub matrix SH 1 includes 5*5 elements, the second sub matrix SH 2 includes 5*26 elements and the first sub matrix SH 3 includes 5*31 elements

The first parity check matrix H 21 may correct (t1+t2) error bits.

FIG. 13 illustrates an example of the second parity check matrix stored in the memory in the ECC engine of FIG. 8 .

Referring to FIGS. 8 and 13 , the second parity check matrix H 22 may include a matrix having 5*31 elements. That is, the second parity check matrix H 22 includes 5 row vectors and 31 column vectors.

The first parity check matrix H 22 may correct t2 error bit.

Referring to FIGS. 10 , 12 and 13 , the second sub matrix SH 2 is the same as the system parity check matrix H 1 and the third sub matrix SH 3 is the same as the second check matrix H 22 . Therefore, the first parity check matrix H 21 may correct (t1+t2) error bits.

FIG. 14 illustrates an example configuration of the codeword that the ECC decoder outputs in the ECC engine of FIG. 8 .

Referring to FIG. 14 , the codeword CW includes the message MSG and the first parity bits PRT 1 , and the message MSG includes the data DTA and second parity bits PRT 2 .

If the decoding mode signal DMS designates the first decoding mode in FIG. 8 , the ECC decoder 430 may correct (t1+t2) error bits in the codeword CW by using the first parity check matrix H 21 , using the data DTA as data bits DTA 11 and using the first parity bits PRT 1 and the second parity bits PRT 2 as parity bits PRT 11 .

If the decoding mode signal DMS designates the second decoding mode in FIG. 8 , the ECC decoder 430 may correct t2 error bit in the codeword CW by using the second parity check matrix H 22 , using the data DTA and the second parity bits PRT 2 as data bits DTA 21 and using the first parity bits PRT 1 as parity bits PRT 21 .

FIG. 15 is a block diagram illustrating an example of the ECC decoder in FIG. 8 according to some example embodiments.

Referring to FIG. 15 , the ECC decoder 430 may include a syndrome generation circuit 440 and a correction circuit 450 .

The syndrome generation circuit 440 is connected to the memory 410 and may generate syndrome SDR based on message bits and the first parity bits in a read codeword (or, codeword) RCW read from the memory cell array 300 by using one of the first parity check matrix H 21 and the second parity check matrix H 22 , in response to the decoding mode signal DMS. The correction circuit 450 receives the codeword RCW, corrects the at least a portion of (t1+t2) error bits in the codeword RCW based on the syndrome SDR and outputs a corrected message C_MSG.

The syndrome generation circuit 440 may include a switch circuit 443 and a syndrome generator 441 .

The switch circuit 443 is connected to the memory 410 and receives the first parity check matrix H 21 and the second parity check matrix H 22 . The switch circuit 443 selects one of the first parity check matrix H 21 and the second parity check matrix H 22 in response to the decoding mode signal DMS and provides the selected parity check matrix.

The syndrome generator 441 receives the read codeword RCW and the selected parity check matrix and generates the syndrome SDR based on the read codeword RCW by using the selected parity check matrix.

If the decoding mode signal DMS designates the first decoding mode, the switch circuit 443 selects the first parity check matrix H 21 of the first parity check matrix H 21 and the second parity check matrix H 22 . Therefore, the syndrome generator 441 generates the syndrome SDR based on the read codeword RCW and the first parity check matrix H 21 in the first decoding mode.

If the decoding mode signal DMS designates the second decoding mode, the switch circuit 443 selects the second parity check matrix H 22 of the first parity check matrix H 21 and the second parity check matrix H 22 . Therefore, the syndrome generator 441 generates the syndrome SDR based on the read codeword RCW and the second parity check matrix H 22 in the second decoding mode.

The correction circuit 450 may include an error locator polynomial calculator 460 , an error location calculator 480 , and/or a data corrector 490 .

The error locator polynomial calculator 460 calculates coefficients of an error locator polynomial based on the syndrome SDR to provide the calculated coefficients to the error location calculator 480 . The error location calculator 480 generates an error location signal ELS indicating a location of at least one error bit in the read codeword RCW, based on the error locator polynomial having the calculated coefficients.

The data corrector 490 receives the read codeword RCW and, if the read codeword RCW includes at least one error bit, corrects the at least one error bit in the read codeword RCW based on the error location signal ELS and outputs the corrected message C_MSG.

FIG. 16 illustrates the syndrome generation circuit in FIG. 15 in the first decoding mode and FIG. 17 illustrates the syndrome generation circuit in FIG. 15 in the second decoding mode.

Referring to FIG. 16 , if the decoding mode signal DMS designates the first decoding mode, the switch circuit 443 provides the first parity check matrix H 21 to the syndrome generator 441 . Therefore, the syndrome generator 441 generates a first syndrome SDR 1 based on the read codeword RCW and the first parity check matrix H 21 in the first decoding mode.

Referring to FIG. 17 , if the decoding mode signal DMS designates the second decoding mode, the switch circuit 443 provides the second parity check matrix H 22 to the syndrome generator 441 . Therefore, the syndrome generator 441 generates a second syndrome SDR 2 based on the read codeword RCW and the second parity check matrix H 22 in the second decoding mode.

FIG. 18 is a table for explaining values in which both of the first decoding mode and the second decoding mode are possible according to correctable error bits in the first decoding mode and the second decoding mode.

In FIG. 18 , it is assumed that the system ECC engine 130 of FIG. 3 uses (n1, k, 2 *t1+1) code (a first code), n1=k+m+t1, and the ECC engine 400 of FIG. 8 uses (n2, n1, ≤2*t2+1) code (a second code).

Here, n2=k+m*t1+m*t2 and m is the smallest positive integer that satisfies 2m−1≥k+m*t1+m*t2.

Referring to FIG. 18 , if m is equal to or greater than five and smaller than or equal to sixteen, the first decoding mode is possible for all values of m and the second decoding mode is possible for some of the values of m. The reason is that the second code the ECC engine 400 guarantees (n2, k, 2*t1+2*t2+1) and a minimum distance of code does not satisfy 2*t2+1 according to values of m, t1 and t2 in some cases. For example, m is eight, t1 is one and t2 is 1, the minimum distance of code does not guarantee 2*t2+1.

When the first generation polynomial g1(x)=M 1 (x) M3(x) . . . M 2t1−1 (x) and the second generation polynomial g2(x)=M 2t1+1 (x) M 2t1+3 (x) . . . M 2t2−1 , the second generation polynomial g2(x) does not include a primitive polynomial in some cases.

The second generation polynomial g2(x) includes the primitive polynomial on condition that GCD(2t1+1, 2 m −1)*GCD(2t1+3, 2 m −1)* . . . *GCD(2t2−1, 2 m −1)=1. Here, GCD represents ‘the greatest common denominator’. In the table of FIG. 18 , if t1 is one and t2 is one, m satisfying above condition is 5, 7, 9, 11, 13 or 15.

FIG. 19 is a flow chart illustrating a method of operating a semiconductor memory device according to some example embodiments.

Referring to FIGS. 5 through 19 , in a method of operating the semiconductor memory device 200 , the ECC decoder 430 reads the codeword CW from the target page of the memory cell array 300 in operation S 110 . The control logic circuit 210 determines whether to perform a first ECC decoding on the codeword CW in operation S 120 . If the control logic circuit 210 determines to perform the first ECC decoding on the codeword CW (YES in operation S 120 ), the control logic circuit 210 controls the ECC decoder 430 to perform the first ECC decoding on the codeword CW to correct at least one error bit in the codeword in operation S 130 ).

If the control logic circuit 210 determines not to perform the first ECC decoding on the codeword CW (NO in operation S 120 ), the control logic circuit 210 controls the ECC decoder 430 to perform a second ECC decoding on the codeword CW to correct at least one error bit in the codeword in operation S 160 ).

The semiconductor memory device 200 transmits a message of the corrected codeword to the memory controller 100 in operation S 190 .

FIG. 20 is a flow chart illustrating the first decoding operation in FIG. 19 .

Referring to FIGS. 5 through 18 and 20 , for performing the first ECC decoding on the codeword in operation S 130 , the syndrome generation circuit 440 in the ECC decoder 430 generates the first syndrome SDR 1 based on the first parity check matrix H 21 and the codeword CW in operation S 140 . The correction circuit 450 in the ECC decoder 430 corrects (t1+t2) error bits in the codeword CW based on the first syndrome SDR 1 in operation S 150 .

FIG. 21 is a flow chart illustrating the second ECC decoding operation in FIG. 19 .

Referring to FIGS. 5 through 18 and 21 , for performing the second ECC decoding on the codeword in operation S 160 , the syndrome generation circuit 440 in the ECC decoder 430 generates the second syndrome SDR 2 based on the second parity check matrix H 22 and the codeword CW in operation S 170 . The correction circuit 450 in the ECC decoder 430 corrects t2 error bit in the codeword CW based on the second syndrome SDR 2 in operation S 150 .

FIG. 22 is a flow chart illustrating a method of operating a memory system according to some example embodiments.

Referring to FIGS. 1 through 22 , in a method of operating a memory system 10 including a semiconductor memory device 200 and a memory controller 100 to control the semiconductor memory device 200 , the memory controller 100 performs a first ECC encoding on data DTA to generate message MSG and transmits the message MSG to the semiconductor memory device 200 in operation S 310 .

The ECC encoder 420 in the semiconductor memory device 200 performs a second ECC encoding on the message MSG to generate codeword CW and writes the codeword CW in a target page of the memory cell array 300 in operation S 320 .

The ECC decoder 430 in the semiconductor memory device 200 reads the codeword CW from the target page of the memory cell array in operation S 330 . The ECC decoder 430 performs one of the first ECC decoding and the second ECC decoding on the codeword CW based on the message MSG and the first parity bits PRT 1 , in response to the decoding mode signal DMS to correct at least one error bit in the codeword CW in operation S 340 .

The semiconductor memory device 200 transmits a corrected message C_MSG to the memory controller 100 in operation S 350 . An ECC decoder 150 in the memory controller 100 performs a third ECC decoding on the corrected message C_MSG to process the corrected message C_MSG in operation S 360 .

According to some example embodiments, the semiconductor memory device 200 obtains code information of a system ECC engine having t1-bit error correction capability, the semiconductor memory device 200 having t2-bit error correction capability may correct (t1+t2) error bits by selectively using a parity check matrix associated with the code information of the system ECC engine when the semiconductor memory device 200 performs ECC decoding. Therefore, the semiconductor memory device 200 may enhance error correction capability of the on-chip ECC engine and may use the on-chip ECC engine efficiently.

FIG. 23 is a block diagram illustrating a semiconductor memory device according to some example embodiments.

Referring to FIG. 23 , a semiconductor memory device 600 may include first group die 610 and second group dies 620 providing a soft error analyzing and correcting function in a stacked chip structure.

The first group die 610 may include at least one buffer die 611 . The second group dies 620 may include a plurality of memory dies 620 - 1 to 620 -p which are stacked on the at least one buffer die 611 and convey data through a plurality of through silicon via (TSV) lines. Here, p is a natural number greater than two.

Each of the memory dies 620 - 1 to 620 -p includes a memory cell array that stores data, and at least one of the memory dies 620 - 1 to 620 -p may include a first type ECC engine 622 which generates transmission parity bits (e.g., transmission parity data) based on transmission data to be sent to the first group die 610 . The first type ECC engine 622 may be referred to as ‘cell core ECC engine’. The first type ECC engine 622 may employ the ECC engine 400 of FIG. 8 . Therefore, the first type ECC engine 622 may perform a first ECC decoding to correct (t1+t2) error bits or may perform a second ECC decoding to correct t2 error bit in the ECC decoding operation.

The at least one buffer die 611 may include a second type ECC engine 612 which corrects a transmission error using the transmission parity bits when a transmission error is detected from the transmission data received through the TSV lines and generates error-corrected data. The second type ECC engine 612 may be referred to as ‘via ECC engine’.

With the above description, a data TSV line group 632 which is formed at one memory die 620 -p may include TSV lines L 1 to Lp, and a parity TSV line group 634 may include TSV lines L 10 to Lq. The TSV lines L 1 to Lp of the data TSV line group 632 and the parity TSV lines L 10 to Lq of the parity TSV line group 634 may be connected to micro bumps MCB which are correspondingly formed among the memory dies 620 - 1 to 620 -p.

At least one of the memory dies 620 - 1 to 620 -p may include DRAM cells each including at least one access transistor and one storage capacitor.

The semiconductor memory device 600 may have a three-dimensional (3D) chip structure or a 2.5D chip structure to communicate with the host through a data bus B 10 . The buffer die 611 may be connected with a memory controller through the data bus B 10 .

When an error is detected from read data in a high bandwidth memory (HBM) or the stacked memory structure, it is determined whether the error is an error occurring due to noise while data is transmitted through the TSV or the error is an error occurring in the memory die.

According to some example embodiments, as illustrated in FIG. 23 , the cell core ECC engine 622 may be included in the memory die, the via ECC engine 612 may be included in the buffer die 611 . Accordingly, it may be possible to detect and correct soft data fail. The soft data fail may include a transmission error which is generated due to noise when data is transmitted through TSV lines.

FIG. 24 is a cross-sectional view of a 3D chip structure employing the semiconductor memory device of FIG. 23 according to some example embodiments.

FIG. 24 shows a 3D chip structure 700 in which a host and a HBM are directly connected without an interposer layer.

Referring to FIG. 24 , a host die 710 such as a system-on-chip (SoC), a central processing unit (CPU), and/or a graphic processing unit (GPU) may be disposed on a printed circuit board (PCB) 720 using flip chip bumps FB. Memory dies D 11 to D 14 may be stacked on the host die 710 to implement a HBM structure such as the memory dies 620 in FIG. 23 . In FIG. 24 , the buffer die 611 or a logic die of FIG. 23 is omitted. However, the buffer die 611 or the logic die may be disposed between the memory die D 11 and the host die 710 . To implement the HBM structure such as the memory dies 620 , TSV lines may be formed at the memory dies D 11 and D 14 . The TSV lines may be electrically connected with micro bumps MCB placed between memory dies.

FIG. 25 is a block diagram illustrating a memory system according to some example embodiments.

Referring to FIG. 25 , a memory system 800 may include a memory controller 810 and a semiconductor memory device 850 .

The memory controller 810 includes a first ECC engine 820 . The first ECC engine 820 may perform a first ECC encoding in data to be transmitted to the semiconductor memory device 850 by using a first generation polynomial to generate a message MSG including the data and second parity bits and transmits the message MSG to the semiconductor memory device 850 . The first ECC engine 820 may correct t1 error bits in the message MSG.

In addition, the memory controller 810 transmits a command CMD and an address ADDR to the semiconductor memory device 850 . The first ECC engine 820 may employ the system ECC engine 130 in FIG. 3 .

The semiconductor memory device 850 includes a memory cell array 860 and a second ECC engine (circuit) 870 .

The second ECC engine 870 performs an ECC encoding on the message MSG to generate a codeword including the message MSG and first parity bits and store the codeword in the memory cell array 860 . The memory cell array 860 may include a plurality of dynamic memory cells or a plurality of resistive type memory cells.

In a read operation of the semiconductor memory device 850 , the second ECC engine 870 performs a first ECC decoding on the codeword read from the memory cell array 860 to correct (t1+t2) error bits in the codeword or performs a second ECC decoding on the codeword read from the memory cell array 860 to correct t2 error bit in the codeword. The second ECC engine 870 may employ the ECC engine 400 of FIG. 8 . Therefore, the second ECC engine 870 may perform the first ECC decoding by using a first parity check matrix or may perform the second ECC decoding by using a second parity check matrix. The first parity check matrix may include a system parity check matrix which an ECC decoder in the first ECC engine 820 uses as a part of the first parity check matrix.

The semiconductor memory device 850 may be a volatile or nonvolatile memory device that employ on-chip ECC engine.

FIG. 26 is a configuration diagram illustrating a semiconductor package including the memory device according to some example embodiments.

Referring to FIG. 26 , a semiconductor package 900 may include one or more (stacked) memory devices 910 and a memory controller 920 .

The stacked memory devices 910 and memory controller 920 may be mounted on an interposer 930 , and the interposer on which the stacked memory device 910 and memory controller 920 are mounted may be mounted on a package substrate 940 . The memory controller 920 may correspond to a semiconductor device which may perform a memory control function, and for example, memory controller 920 may be implemented as an application processor (AP).

The stacked memory device 910 may be implemented in various forms, and the stacked memory device 910 may be a memory device in a high bandwidth memory (HBM) form in which a plurality of layers are stacked

Therefore, the stacked memory device 910 may include at least one buffer die and a plurality of memory dies and at least one of the memory dies may include a memory cell array and an ECC engine.

The ECC engine, when performing an ECC decoding in a read operation, performs a first ECC decoding on the codeword read from the memory cell array to correct (t1+t2) error bits in the codeword or performs a second ECC decoding on the codeword read from the memory cell array to correct t2 error bit in the codeword. The ECC engine may employ the ECC engine 400 of FIG. 8 . Therefore, the ECC engine may perform the first ECC decoding by using a first parity check matrix or may perform the second ECC decoding by using a second parity check matrix.

The plurality of stacked memory devices 910 may be mounted on the interposer 930 , and memory controller 920 may communicate with the plurality of stacked memory devices 910 . Here, the interposer 930 may include a TSV form, an embedded multi-die interconnect bridge (EMIB) which is non-TSV manner and/or a printed circuit board (PCB) form.

According to some example embodiments, the semiconductor memory device 200 obtains code information of a system ECC engine having t1-bit error correction capability, the semiconductor memory device 200 having t2-bit error correction capability may correct (t1+t2) error bits by selectively using a parity check matrix associated with the code information of the system ECC engine when the semiconductor memory device 200 performs ECC decoding. Therefore, the semiconductor memory device 200 may enhance error correction capability of on-chip ECC engine and may use on-chip ECC engine efficiently.

The present disclosure may be applied to semiconductor memory devices and memory systems employing the ECC. That is, the present disclosure may be applied to various memory systems, storage devices and/or computers.

The foregoing is illustrative of some example embodiments and is not to be construed as limiting thereof. Although a few example embodiments have been described, those skilled in the art will readily appreciate that many modifications are possible in the example embodiments without materially departing from the novel teachings and advantages of the present disclosure. Accordingly, all such modifications are intended to be included within the scope of the present disclosure as defined in the claims.