Semiconductor device and method

A method of manufacturing a semiconductor device, the method comprising:nforming a first opening in a semiconductor substrate;epitaxially growing a first semiconductor material within the first opening;planarizing the first semiconductor material with the semiconductor substrate;forming a second opening in the first semiconductor material;epitaxially growing a second semiconductor material within the second opening;planarizing the second semiconductor material with the first semiconductor material; andepitaxially growing a channel layer over the first semiconductor material and the second semiconductor material.

A method of manufacturing a semiconductor device, the method comprising:nembedding a dielectric material into a semiconductor substrate;embedding a first semiconductor material within the semiconductor substrate, wherein the embedding the first semiconductor material is performed at least in part using a first epitaxial growth process;embedding a second semiconductor material into the semiconductor substrate, wherein the embedding the second semiconductor material is performed at least in part using a second epitaxial growth process different from the first epitaxial growth process and wherein the second semiconductor material is planar with the first semiconductor material; andepitaxially growing a channel layer onto the first semiconductor material and the second semiconductor material, wherein at least a portion of the channel layer extends over the dielectric material.

A method of manufacturing a semiconductor device, the method comprising:ndepositing a first mask layer onto a semiconductor substrate;using the first mask layer to pattern a first opening into the semiconductor substrate;filling the first opening with a first epitaxial material using at least in part a first epitaxial growth process;depositing a second mask layer onto the first epitaxial material;using the second mask layer to pattern a second opening into the first epitaxial material;filling the second opening with a second epitaxial material using at least in part a second epitaxial growth process;growing a channel material on the first epitaxial material and the second epitaxial material using at least in part a third epitaxial growth process;growing a third epitaxial material onto the channel material using at least in part a fourth epitaxial growth process;depositing a third mask layer onto the third epitaxial material;using the third mask layer to pattern a third opening into the third epitaxial material;filling the third opening with a fourth epitaxial material using at least in part a fifth epitaxial growth process; andpatterning the third epitaxial material, the fourth epitaxial material, and the channel material to form a plurality of nanowires.