Semiconductor device

A semiconductor device comprising:na first insulating film over a substrate;a first oxide insulating film over the first insulating film;an oxide semiconductor film including a channel formation region over and in contact with the first oxide insulating film;a second oxide insulating film over and in contact with the oxide semiconductor film; anda second insulating film over the second oxide insulating film,wherein the first insulating film and the second insulating film are in physical contact with each other, andwherein the oxide semiconductor film, the second oxide insulating film, and a part of the first oxide insulating film are provided on an inner side of the first insulating film and the second insulating film.

A semiconductor device comprising:na transistor comprising:na first insulating film over a substrate;a first oxide insulating film over the first insulating film;an oxide semiconductor film over and in contact with the first oxide insulating film;source and drain electrodes in contact with the oxide semiconductor film;a second oxide insulating film over and in contact with the oxide semiconductor film; anda second insulating film over the second oxide insulating film;a pixel electrode over the second insulating film; anda capacitor comprising;na film having conductivity over the first oxide insulating film;the second insulating film over and in contact with the film having conductivity; andthe pixel electrode,wherein the first insulating film and the second insulating film are in physical contact with each other, andwherein the pixel electrode is in contact with one of the source and drain electrodes in an opening in the second insulating film.

A semiconductor device comprising:na transistor comprising:na first gate electrode over a substrate;a first insulating film over the first gate electrode;a first oxide insulating film over the first insulating film;an oxide semiconductor film over and in contact with the first oxide insulating film;source and drain electrodes in contact with the oxide semiconductor film;a second oxide insulating film over and in contact with the oxide semiconductor film;a second insulating film over the second oxide insulating film; anda second gate electrode over the second insulating film;a pixel electrode over the second insulating film; anda capacitor comprising;na film having conductivity over the first oxide insulating film;the second insulating film over and in contact with the film having conductivity; andthe pixel electrode,wherein the first insulating film and the second insulating film are in physical contact with each other,wherein the first gate electrode and the second gate electrode overlap each other with the oxide semiconductor film provided therebetween, andwherein the pixel electrode is in contact with one of the source and drain electrodes in a first opening in the second insulating film.