A method for providing a textured layer in an optoelectronic device, the method comprising:nepitaxially growing a template layer of islands on a first planar semiconductor layer wherein the template layer has significant inhomogeneity either in thickness; andexposing the template layer and the first planar semiconductor layer to an etching process, to create at least one textured surface in the first planar semiconductor layer using the template layer as an etching mask, andthen epitaxially growing a second semiconductor layer over the template layer.
›2.↳ 1The method of claim 1, wherein the at least one textured surface is operative to cause scattering of light.d2
The method of claim 1, wherein the at least one textured surface is operative to cause scattering of light.
›3.↳ 1The method of claim 1, wherein the template layer is formed by physical vapor deposition, chemical vapor deposition, liquid phase deposition, lithogra…d2
The method of claim 1, wherein the template layer is formed by physical vapor deposition, chemical vapor deposition, liquid phase deposition, lithography, or liquid coating.
›4.↳ 1The method of claim 1, wherein the etching process is done by a liquid or solution-based chemical etchant.d2
The method of claim 1, wherein the etching process is done by a liquid or solution-based chemical etchant.
›5.↳ 1The method of claim 1, wherein etching process is done by a technique from the group consisting of gas etching, laser etching, plasma etching, or ion …d2
The method of claim 1, wherein etching process is done by a technique from the group consisting of gas etching, laser etching, plasma etching, or ion etching.
›6.↳ 1The method of claim 1, wherein the template layer itself is not etched.d2
The method of claim 1, wherein the template layer itself is not etched.
›7.↳ 1The method of claim 1, wherein the template layer itself is etched.d2
The method of claim 1, wherein the template layer itself is etched.
›8.↳ 1The method of claim 1, wherein the etching process is selective to etch the first layer more rapidly than the template layer.d2
The method of claim 1, wherein the etching process is selective to etch the first layer more rapidly than the template layer.
›9.↳ 1The method of claim 1, wherein the etching process is selective to etch certain material compositions contained within the template layer more rapidly…d2
The method of claim 1, wherein the etching process is selective to etch certain material compositions contained within the template layer more rapidly than certain other material compositions within the template layer.
›10.↳ 1The method of claim 1, wherein the template layer is formed due to a lattice mismatch between the template layer and the first layer, on which the tem…d2
The method of claim 1, wherein the template layer is formed due to a lattice mismatch between the template layer and the first layer, on which the template layer is deposited.
›11.↳ 1The method of claim 1, wherein the template layer is thin enough to incompletely cover the first layer on which it is deposited.d2
The method of claim 1, wherein the template layer is thin enough to incompletely cover the first layer on which it is deposited.
›12.↳ 1The method of claim 1, wherein the template layer includes a plurality of islands.d2+1
The method of claim 1, wherein the template layer includes a plurality of islands.
›13.↳ 12The method of claim 12, wherein the plurality of islands have variable dimensions relative to each other.d3
The method of claim 12, wherein the plurality of islands have variable dimensions relative to each other.
›14.↳ 1The method of claim 1, wherein the textured surface causes photons to scatter at randomized angles.d2
The method of claim 1, wherein the textured surface causes photons to scatter at randomized angles.
›15.↳ 1The method of claim 1, wherein the template layer is a semiconductor and includes at least one of the group consisting of: gallium, aluminum, indium, …d2
The method of claim 1, wherein the template layer is a semiconductor and includes at least one of the group consisting of: gallium, aluminum, indium, phosphorus, nitrogen, and arsenic.
›16.↳ 1The method of claim 1, wherein the template layer has a larger band gap than the first layer.d2
The method of claim 1, wherein the template layer has a larger band gap than the first layer.
›17.↳ 1The method of claim 1, wherein the template layer is transparent.d2
The method of claim 1, wherein the template layer is transparent.
›18.↳ 1The method of claim 1, wherein the template is formed using a Stranski-Krastanov process.d2
The method of claim 1, wherein the template is formed using a Stranski-Krastanov process.
›19.↳ 1The method of claim 1, wherein the template is formed using a Volmer-Weber process.d2
The method of claim 1, wherein the template is formed using a Volmer-Weber process.
›20.↳ 1The method of claim 1 further comprising depositing a dielectric layer over the template layer.d2
The method of claim 1 further comprising depositing a dielectric layer over the template layer.
›21.↳ 1The method of claim 1 further comprising depositing a transparent conducting oxide (TCO) layer over the template layer.d2
The method of claim 1 further comprising depositing a transparent conducting oxide (TCO) layer over the template layer.
›22.↳ 1The method of claim 1 further comprising depositing an anti-reflective coating on the textured surface.d2
The method of claim 1 further comprising depositing an anti-reflective coating on the textured surface.
›23.↳ 1The method of claim 1 further comprising depositing a metal reflective layer over the template layer.d2+1
The method of claim 1 further comprising depositing a metal reflective layer over the template layer.
›24.↳ 23The method of claim 23, wherein a dielectric layer between the metal layer and the first layer is provided with apertures allowing a conductive contac…d3
The method of claim 23, wherein a dielectric layer between the metal layer and the first layer is provided with apertures allowing a conductive contact between the metal reflective layer and the first layer or the template layer, or both.
›25.↳ 1The method of claim 1, wherein the textured surface is a back reflector layer positioned further from the front of the optoelectronic device than a p-…d2
The method of claim 1, wherein the textured surface is a back reflector layer positioned further from the front of the optoelectronic device than a p-n junction of the optoelectronic device.
›26.↳ 1The method of claim 1, wherein the textured surface is a front window layer positioned closer to the front of the optoelectronic device than a p-n jun…d2
The method of claim 1, wherein the textured surface is a front window layer positioned closer to the front of the optoelectronic device than a p-n junction of the optoelectronic device.
›27.↳ 1The method of claim 1 further comprising:ndepositing a semiconductor contact layer over the template layer; anddepositing a dielectric layer over the …d2
The method of claim 1 further comprising:ndepositing a semiconductor contact layer over the template layer; anddepositing a dielectric layer over the semiconductor contact layer.
›28.↳ 1A textured surface in a photovoltaic device, the textured surface fabricated using the process of claim 1.d2
A textured surface in a photovoltaic device, the textured surface fabricated using the process of claim 1.
