A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure attached to a wafer handle having at least one aperture that extends through the wafer handle to an exposed portion of the semiconductor stack structure. A thermally conductive and electrically resistive polymer substantially fills the at least one aperture and contacts the exposed portion of the semiconductor stack structure. One method for manufacturing the semiconductor device includes forming patterned apertures in the wafer handle to expose a portion of the semiconductor stack structure. The patterned apertures may or may not be aligned with sections of RF circuitry making up the semiconductor stack structure. A following step includes contacting the exposed portion of the semiconductor stack structure with a polymer and substantially filling the patterned apertures with the polymer, wherein the polymer is thermally conductive and electrically resistive.

Claims

31 · 2 independent · depth 5

31 granted claims

›1.independentA semiconductor device comprising:na semiconductor stack structure;a wafer handle attached to the semiconductor stack structure and having a pattern o…+15

›2.↳ 1The semiconductor device of claim 1 wherein the polymer is further disposed on an external planar surface of the wafer handle.d2+1

›4.↳ 1The semiconductor device of claim 1 wherein the polymer includes an admixture for increasing thermal conductivity of the polymer.d2

›5.↳ 1The semiconductor device of claim 1 wherein the polymer is a thermoplastic.d2

›6.↳ 1The semiconductor device of claim 1 wherein the polymer is a thermoset plastic.d2

›7.↳ 1The semiconductor device of claim 1 wherein the wafer handle has a thickness that ranges from around about 50 μm to around about 150 μm.d2

›8.↳ 1The semiconductor device of claim 1 wherein the openings within the pattern of polygon-shaped openings are of substantially different sizes.d2

›9.↳ 1The semiconductor device of claim 1 wherein the pattern of polygon-shaped openings is aligned over select sections of RF circuitry making up the semic…d2

›10.↳ 1The semiconductor device of claim 1 wherein a thermal conductivity of the polymer ranges from greater than 2 watts per meter Kelvin (W/mK) to around a…d2

›11.↳ 1The semiconductor device of claim 1 wherein a thermal conductivity of the polymer ranges from around about 10 W/mK to around about 50 W/mK.d2

›12.↳ 1The semiconductor device of claim 1 wherein a thermal conductivity of the polymer ranges from around about 50 W/mK to around about 500 W/mK.d2

›13.↳ 1The semiconductor device of claim 1 wherein an electrical resistivity of the polymer ranges from greater than 106 Ohm-cm to around about 1012 Ohm-cm.d2

›14.↳ 1The semiconductor device of claim 1 wherein an electrical resistivity of the polymer ranges from around about 1012 Ohm-cm to around about 1016 Ohm-cm.d2

›15.↳ 1The semiconductor device of claim 1 further comprising a silicon nitride layer deposited on the exposed portion of the semiconductor stack structure b…d2+1

›17.independentA method of manufacture for a semiconductor device comprising:nproviding a semiconductor stack structure attached to a wafer handle;forming a pattern …+14

›18.↳ 17The method of claim 17 wherein the semiconductor device further includes flipchip bumps on a side of the semiconductor stack structure that is opposit…d2+3

›22.↳ 17The method of claim 17 further including disposing the polymer onto an external planar surface of the wafer handle.d2

›23.↳ 17The method of claim 17 wherein the openings within the pattern of polygon-shaped openings are of substantially different sizes.d2

›24.↳ 17The method of claim 17 wherein the pattern of polygon-shaped openings is aligned over select sections of RF circuitry making up the semiconductor stac…d2

›25.↳ 17The method of claim 17 wherein a thermal conductivity of the polymer ranges from greater than 2 watts per meter Kelvin (W/mK) to around about 10 W/mK.d2

›26.↳ 17The method of claim 17 wherein a thermal conductivity of the polymer ranges from around about 10 W/mK to around about 50 W/mK.d2

›27.↳ 17The method of claim 17 wherein a thermal conductivity of the polymer ranges from around about 50 W/mK to around about 500 W/mK.d2

›28.↳ 17The method of claim 17 wherein an electrical resistivity of the polymer ranges from greater than 106 Ohm-cm to around about 1012 Ohm-cm.d2

›29.↳ 17The method of claim 17 wherein an electrical resistivity of the polymer ranges from around about 1012 Ohm-cm to around about 1016 Ohm-cm.d2

›30.↳ 17The method of claim 17 further comprising depositing a silicon nitride layer onto the exposed portion of the semiconductor stack structure between the…d2+1

Classifications

10 codes

IPC · International Patent Classification

Section H — Electricity

H01L29/02
H01L21/683
H01L21/02
H01L23/36
H01L29/06
H01L23/29
H01L23/31
H01L21/56
H01L29/786
H01L23/373

Claim changes

Soon

Coming soonHow the claims changed between publication and grant

See which claims were amended, added or cancelled during examination, with every added and removed word marked.

AmendedAddedCancelledUnchanged

The published claims of this patent are not paired with the granted ones in what we hold.

File wrapper

Pendency

1.5 y

565 days filing → grant

Office actions

non-final + final

Responses

no RCE

Examiner

Nikolay Yushin

art unit 2893 · TC 2800

Law firm

Law firm · Log in to unlock

Citations: 71 back · 0 forward

See the full prosecution history — every USPTO and applicant action on this file, in order.

Term & fees

See the term timeline — pendency span, in-force span, the maintenance fees paid and both computed expiry dates.

Priority chain

2 priority documents

Priority

24 Apr 2013

earliest claimed

›Priority documents — 2

Type	Document	Date
provisional	US 61815327	24 Apr 2013
related publication	US 20140252567 A1	11 Sep 2014

Validity challenges

See the validity challenges on record — reexaminations, IPRs and PGRs, with their institution decisions and outcomes.

Citations

See every patent this one cites and every patent that cites it back — publication, assignee, and how each one was found.