A method for manufacturing a dopant layer of a solar cell, the method comprising:nion-implanting a dopant to a substrate; andheat-treating for an activation of the dopant,wherein the heat-treating for the activation comprises:an initial duration having a first initial duration for forming an anti-out-diffusion film under a first gas atmosphere comprising oxygen; anda maintaining duration for activating the dopant at a first temperature after the initial duration,wherein the initial duration is composed of a temperature increase region of the heat-treating for the activation under a temperature lower than the first temperature before the maintaining duration,wherein the maintaining duration is performed only after the first initial duration,wherein the first initial duration and the maintaining duration are parts of an in-situ process,wherein the initial duration further comprises a second initial duration after the first initial duration,in the first initial duration, a temperature increases from a second temperature lower than the first temperature to a third temperature higher than the second temperature and lower than the first temperature,in the second initial duration, a temperature increases from the third temperature to the first temperature, andwherein a second gas atmosphere different from the first gas atmosphere is supplied in the second initial duration.
›2.↳ 1The method according to claim 1, wherein the anti-out-diffusion film comprises an oxide film.d2+1
The method according to claim 1, wherein the anti-out-diffusion film comprises an oxide film.
›3.↳ 2The method according to claim 2, wherein nitrogen is supplied with the oxygen in the first initial duration.d3
The method according to claim 2, wherein nitrogen is supplied with the oxygen in the first initial duration.
›4.↳ 1The method according to claim 1, wherein the maintaining duration is performed under the second gas atmosphere different from the first gas atmosphere…d2+1
The method according to claim 1, wherein the maintaining duration is performed under the second gas atmosphere different from the first gas atmosphere.
›5.↳ 4The method according to claim 4, wherein the second gas atmosphere comprises nitrogen.d3
The method according to claim 4, wherein the second gas atmosphere comprises nitrogen.
›6.↳ 1The method according to claim 1, wherein a process time of the maintaining duration is longer than a process time of the first initial duration.d2
The method according to claim 1, wherein a process time of the maintaining duration is longer than a process time of the first initial duration.
›7.↳ 1The method according to claim 1, wherein a process time of the first initial duration is in a range of about 1 minute to about 60 minutes.d2
The method according to claim 1, wherein a process time of the first initial duration is in a range of about 1 minute to about 60 minutes.
›8.↳ 1The method according to claim 1, wherein the second gas atmosphere is supplied in the maintaining duration.d2
The method according to claim 1, wherein the second gas atmosphere is supplied in the maintaining duration.
›9.↳ 1The method according to claim 1, wherein the heat-treating for the activation further comprises a finishing duration where a temperature decreases aft…d2
The method according to claim 1, wherein the heat-treating for the activation further comprises a finishing duration where a temperature decreases after the maintaining duration.
›10.↳ 1The method according to claim 1, wherein the initial duration and the maintaining duration are consecutively performed in a same heat-treating apparat…d2
The method according to claim 1, wherein the initial duration and the maintaining duration are consecutively performed in a same heat-treating apparatus.
›11.↳ 1The method according to claim 1, wherein the first temperature is in a range of about 950° C. to 1300° C.d2
The method according to claim 1, wherein the first temperature is in a range of about 950° C. to 1300° C.
›12.↳ 1The method according to claim 1, wherein a temperature in the first initial duration is in a range of about 650° C. to 900° C.d2
The method according to claim 1, wherein a temperature in the first initial duration is in a range of about 650° C. to 900° C.
›13.↳ 1The method according to claim 1, wherein the anti-out-diffusion film has a thickness of about 0.1 nm to 20 nm.d2
The method according to claim 1, wherein the anti-out-diffusion film has a thickness of about 0.1 nm to 20 nm.
›14.↳ 1The method according to claim 1, further comprising cleaning the substrate after the heat-treating for the activation,nwherein the anti-out-diffusion …d2+1
The method according to claim 1, further comprising cleaning the substrate after the heat-treating for the activation,nwherein the anti-out-diffusion film is eliminated in the cleaning.
›15.↳ 14The method according to claim 14, wherein silicate glass is formed on a surface of the substrate in the heat-treating for the activation, andnthe sili…d3
The method according to claim 14, wherein silicate glass is formed on a surface of the substrate in the heat-treating for the activation, andnthe silicate glass formed on the surface of the substrate is eliminated with the anti-out-diffusion film during the cleaning.
›16.↳ 1The method according to claim 1, further comprising forming a capping layer on a surface of the substrate between the ion-implanting and the heat-trea…d2
The method according to claim 1, further comprising forming a capping layer on a surface of the substrate between the ion-implanting and the heat-treating for the activation,nwherein the anti-out-diffusion film is formed on the capping layer during the heat-treating for the activation.
›17.↳ 1A method for manufacturing a solar cell, the method comprising:nperforming the method for manufacturing the dopant layer according to claim 1; andform…d2+1
A method for manufacturing a solar cell, the method comprising:nperforming the method for manufacturing the dopant layer according to claim 1; andforming an electrode electrically connected to the dopant layer.
›18.↳ 17The method according to claim 17, wherein the dopant layer is at least one of an emitter layer, a front surface field layer, and a back surface field …d3
The method according to claim 17, wherein the dopant layer is at least one of an emitter layer, a front surface field layer, and a back surface field layer.
