USPatentGranted
B2

Niobium nitride and method for producing same, niobium nitride-containing film and method for producing same, semiconductor, semiconductor device, photocatalyst, hydrogen generation device, and energy system

Granted 14 Jul 2015 · no office action yet

Life of the patent

6 dated events
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Abstract

The present invention is a niobium nitride which has a composition represented by the composition formula Nb 3 N 5 and in which a constituent element Nb has a valence of substantially +5. The method for producing the niobium nitride of the present invention includes the step of nitriding an organic niobium compound by reacting the organic niobium compound with a nitrogen compound gas.

Claims

6 · 2 independent · depth 3
123456
6 granted claims

Classifications

19 codes
IPC · International Patent Classification
Section B — Performing operations; transporting
  • B01J19/12
  • B01J35/00
  • B01J23/648
  • B01J27/24
  • B01J37/08
  • B01J23/20
Section C — Chemistry; metallurgy
  • C04B35/628
  • C25B1/00
  • C01B21/06
  • C04B35/58
  • C01B3/04
  • C04B35/632
Section H — Electricity
  • H01B1/02
  • H01M6/04
  • H01M8/08
  • H01M8/06
  • H01B1/06
  • H01M8/04
  • H01B1/08

Claim changes

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File wrapper

⤢ drag to zoomOct 2012Jan 2013Apr 2013Jul 2013Oct 2013Jan 2014Apr 2014Jul 2014Oct 2014Jan 2015Apr 2015Jul 2015USPTOApplicantExaminer-initiated interview
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Pendency
2.6 y
958 days filing → grant
Office actions
0
none on record
Responses
1
no RCE
Interviews
1
examiner interview summaries
Examiner
Patricia L Hailey
art unit 1732 · TC 1700
Citations: 19 back · 0 forward

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Term & fees

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Priority chain

1 priority documents
›Priority documents — 1
TypeDocumentDate
related publicationUS 20140057187 A127 Feb 2014

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Citations

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