Niobium nitride and method for producing same, niobium nitride-containing film and method for producing same, semiconductor, semiconductor device, photocatalyst, hydrogen generation device, and energy system
Granted 14 Jul 2015 · no office action yet
Assignee: Panasonic
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Attorney: Attorney · Log in to unlock
Inventors: Takahiro Suzuki, Satoru Tamura, Takaiki Nomura, Tomohiro Kuroha +3 · Examiner: Patricia L Hailey · AU 1732 · TC 1700
Life of the patent
6 dated eventsAbstract
The present invention is a niobium nitride which has a composition represented by the composition formula Nb 3 N 5 and in which a constituent element Nb has a valence of substantially +5. The method for producing the niobium nitride of the present invention includes the step of nitriding an organic niobium compound by reacting the organic niobium compound with a nitrogen compound gas.
Claims
6 · 2 independent · depth 3Classifications
19 codes- B01J19/12
- B01J35/00
- B01J23/648
- B01J27/24
- B01J37/08
- B01J23/20
- C04B35/628
- C25B1/00
- C01B21/06
- C04B35/58
- C01B3/04
- C04B35/632
- H01B1/02
- H01M6/04
- H01M8/08
- H01M8/06
- H01B1/06
- H01M8/04
- H01B1/08
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1 priority documents›Priority documents — 1
| Type | Document | Date |
|---|---|---|
| related publication | US 20140057187 A1 | 27 Feb 2014 |
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