An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

Claims

19 · 3 independent · depth 3

19 granted claims

›1.independentA semiconductor device comprising:na gate electrode layer over a substrate;a gate insulating layer over the gate electrode layer;a connection electrod…+4

›6.independentA semiconductor device comprising:na gate electrode layer over a substrate;a gate insulating layer over the gate electrode layer;a connection electrod…+4

›11.independentA semiconductor device comprising:na gate electrode layer over a substrate;a gate insulating layer over the gate electrode layer;a connection electrod…+8

›12.↳ 11The semiconductor device according to claim 11, wherein the inorganic layer comprises a film selected from the group consisting of a silicon oxide fil…d2

›13.↳ 11The semiconductor device according to claim 11, further comprising a conductive layer over the insulating film,nwherein the conductive layer overlaps …d2+2

›16.↳ 11The semiconductor device according to claim 11, wherein each of the gate wiring and the source wiring comprises a conductive material which has lower …d2

›17.↳ 11The semiconductor device according to claim 11, wherein each of the gate wiring and the source wiring comprises at least one of aluminum and copper.d2

›18.↳ 11The semiconductor device according to claim 11, wherein the source electrode layer and the connection electrode layer are formed from the same layer.d2

›19.↳ 11The semiconductor device according to claim 11, wherein the gate electrode layer, the connection electrode layer and the source electrode layer are fo…d2

Classifications

5 codes

IPC · International Patent Classification

Section H — Electricity

H01L29/66
H01L29/786
H01L27/12

USPC · US Patent Classification

257/43438/149

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Pendency

1.7 y

624 days filing → grant

Office actions

non-final + final

Responses

2 RCE

Examiner

Thao P Le

art unit 2818 · TC 2800

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Priority chain

1 priority documents

›Priority documents — 1

Type	Document	Date
related publication	US 20140048798 A1	20 Feb 2014

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