A method for manufacturing a light-emitting device includes a step of forming an etching resistant protection layer on a substrate provided with an organic planarizing layer, a step of forming a plurality of electrodes on the etching resistant protection layer, a step of forming an organic compound layer on the substrate provided with the plurality of electrodes, a step of forming a resist layer on the organic compound layer formed on parts of electrodes among the plurality of electrodes using a photolithographic method, and a step of removing the organic compound layer in a region not covered with the resist layer by dry etching, wherein an entire surface of the organic planarizing layer on the substrate on which steps up to the step of forming the plurality of electrodes have been performed is covered with at least one of the etching resistant protection layer and the electrode.

Claims

11 · 2 independent · depth 3

11 granted claims

›1.independentA method for manufacturing an organic light-emitting device,nwherein a plurality of first pixels and a plurality of second pixels are provided respect…+2

A method for manufacturing an organic light-emitting device,nwherein a plurality of first pixels and a plurality of second pixels are provided respectively on a substrate including an organic planarizing layer,wherein the first pixel includes a first lower electrode, a first organic compound layer including at least a light-emitting layer, and a first upper electrode,wherein the second pixel includes a second lower electrode, a second organic compound layer including at least a light-emitting layer, and a second upper electrode, andwherein the first upper electrode and the second upper electrode are common electrodes that are common to all pixels provided on the substrate, the method comprising:a step of preparing the substrate provided with the organic planarizing layer;a step of forming the lower electrodes wherein the first lower electrode and the second lower electrode are formed;a step of forming the first organic compound layer in such a way as to cover the first lower electrode and the second lower electrode;a step of forming of a release layer wherein the release layer soluble in pure water is formed on the first organic compound layer;a step of forming a protection layer composed of an inorganic material, which is formed on the release layer;a step of forming a resist layer wherein a film of a resist material is formed on the protection layer;a step of processing the resist layer wherein the resist layer is patterned so as to leave the resist layer formed in a region in which the first pixel is provided;a step of removing the protection layer, the release layer, and the first organic compound layer in a region where the resist layer is removed in the step of processing the resist layer, by the dry etching; anda step of forming the second organic compound layer on the second lower electrode, andthe method further comprising:a step of forming an etching resistant protection layer wherein the etching resistant protection layer is provided before the step of forming the first organic compound layer so that the organic planarizing layer is covered with at least one of the lower electrode and the etching resistant protection layer,wherein an etching rate of the etching resistant protection layer is slower than that of the first organic compound layer in the step of removing the first organic compound layer.

›4.independentA method for manufacturing an organic light-emitting device,nwherein a plurality of pixels are provided respectively on a substrate including an organ…+7

›5.↳ 4The method according to claim 4, wherein the method comprises the step of forming the etching resistant protection layer between the step of forming t…d2

›6.↳ 4The method according to claim 4, wherein the etching resistant protection layer is a layer composed of an inorganic material.d2+1

›8.↳ 4The method according to claim 4, in the step of removing the protection layer and the release layer, the release layer is contacted to and dissolved i…d2

›9.↳ 4The method according to claim 4, further comprising a step of forming the upper electrode after the step of removing the protection layer and the rele…d2

›10.↳ 4The method according to claim 4, wherein the release layer contains one or more kinds selected from the group consisting of polyvinyl alcohol, polyacr…d2

›11.↳ 4The method according to claim 4, wherein the protection layer is a silicon nitride film or a silicon oxide nitride film.d2

Classifications

16 codes

IPC · International Patent Classification

Section H — Electricity

H01L27/32
H01L51/56
H01L21/00
H01L51/00

USPC · US Patent Classification

438/82257/642257/E25.008438/789438/780257/60257/40438/99257/E21.299257/E21.242438/781257/E21.024

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Su C Kim

art unit 2899 · TC 2800

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Type	Document	Date
related publication	US 20130084667 A1	4 Apr 2013

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