An interlayer insulating film is formed. Then a first gate electrode and a second gate electrode are buried in the interlayer insulating film. Then, an anti-diffusion film is formed over the interlayer insulating film, over the first gate electrode, and over the second gate electrode. Then, a first semiconductor layer is formed over the anti-diffusion film which is present over the first gate electrode. Then, an insulating cover film is formed over the upper surface and on the lateral side of the first semiconductor layer and over the anti-diffusion film. Then, a semiconductor film is formed over the insulating cover film. Then, the semiconductor film is removed selectively to leave a portion positioned over the second gate electrode, thereby forming a second semiconductor layer.

Claims

13 · 1 independent · depth 3

13 granted claims

›1.independentA semiconductor device comprising:na multilayer interconnect layer having a first interconnect layer and a second interconnect layer positioned over t…+12

›2.↳ 1The semiconductor device according to claim 1,nwherein the multilayer interconnect layer has an anti-diffusion film positioned between the first inter…d2+2

›4.↳ 1The semiconductor device according to claim 1,nwherein the multilayer interconnect layer has an anti-diffusion film positioned between the first inter…d2

›5.↳ 1The semiconductor device according to claim 1,nwherein the multilayer interconnect layer has an anti-diffusion film positioned between the first inter…d2

›6.↳ 1The semiconductor device according to claim 1,nwherein the film thickness is different between the first gate insulating film and the second gate insu…d2

›7.↳ 1The semiconductor device according to claim 1,nwherein the conduction type of the first semiconductor layer and the second semiconductor layer is diff…d2

›8.↳ 1The semiconductor device according to claim 1,nwherein the conduction type of the first semiconductor layer and the second semiconductor layer is iden…d2

›9.↳ 1A semiconductor device according to claim 1, whereinnthe insulating cover film contains one of SiN film, SiO2 film, SiOC film, and SiOCH film.d2

›11.↳ 1The semiconductor device according to claim 1,nwherein each of the first gate electrode and the second gate electrode comprises a Cu interconnect.d2

›12.↳ 1The semiconductor device according to claim 1,nwherein each of the first semiconductor layer and the second semiconductor layer comprises an oxide sem…d2+1

Classifications

7 codes

IPC · International Patent Classification

Section H — Electricity

H01L23/522
H01L27/088
H01L29/66
H01L27/12

USPC · US Patent Classification

257/43257/72257/59

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Pendency

2.3 y

855 days filing → grant

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after a restriction

Examiner

Tran Tran

art unit 2811 · TC 2800

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1 priority documents

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Type	Document	Date
related publication	US 20130153887 A1	20 Jun 2013

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