A semiconductor device comprising:na heat dissipating substrate having a relatively high thermal conductivity, the heat dissipating substrate including first and second principal surfaces, at least one of the first and second principal surfaces including an electric insulator provided with an outer conductor thereon;a wiring substrate mounted on the at least one of the first and second principal surfaces of the heat dissipating substrate, having a thermal conductivity lower than that of the heat dissipating substrate, and including a wiring conductor mainly including silver or copper and located inside the wiring substrate, the wiring conductor being electrically connected to the outer conductor; anda semiconductor element that produces heat during operation, mounted on the at least one of the first and second principal surfaces of the heat dissipating substrate, and including a lower-surface electrode located on a mounting surface facing the at least one of the first and second principal surfaces of the heat dissipating substrate, the lower-surface electrode being electrically connected via the outer conductor to the wiring conductor; whereinthe first principal surface of the heat dissipating substrate is electrically insulated from the second principal surface of the heat dissipating substrate.
›2.↳ 1The semiconductor device according to claim 1, wherein the wiring substrate includes a through hole passing therethrough in a direction perpendicular …d2+2
The semiconductor device according to claim 1, wherein the wiring substrate includes a through hole passing therethrough in a direction perpendicular or substantially perpendicular to the at least one of the first and second principal surfaces, and the semiconductor element is disposed in the through hole.
›3.↳ 2The semiconductor device according to claim 2, wherein a plurality of the semiconductor elements are provided, the wiring substrate includes a plurali…d3
The semiconductor device according to claim 2, wherein a plurality of the semiconductor elements are provided, the wiring substrate includes a plurality of the through holes, and the plurality of semiconductor elements are disposed in the respective through holes.
›4.↳ 2The semiconductor device according to claim 2, wherein the through hole is larger than the semiconductor element such that a gap is provided between a…d3
The semiconductor device according to claim 2, wherein the through hole is larger than the semiconductor element such that a gap is provided between an inner periphery of the through hole and an outer periphery of the semiconductor element.
›5.↳ 1The semiconductor device according to claim 1, wherein the semiconductor element includes an upper-surface electrode on a surface opposite the mountin…d2
The semiconductor device according to claim 1, wherein the semiconductor element includes an upper-surface electrode on a surface opposite the mounting surface, and the upper-surface electrode is electrically connected to the wiring conductor via a wire.
›6.↳ 1The semiconductor device according to claim 1, wherein the semiconductor element has a heat resistance temperature of about 200° C. or higher.d2
The semiconductor device according to claim 1, wherein the semiconductor element has a heat resistance temperature of about 200° C. or higher.
›7.↳ 1The semiconductor device according to claim 1, wherein the semiconductor element is a bare semiconductor element.d2
The semiconductor device according to claim 1, wherein the semiconductor element is a bare semiconductor element.
›8.↳ 1The semiconductor device according to claim 1, wherein the heat dissipating substrate includes any one of an aluminum nitride substrate, an alumina su…d2
The semiconductor device according to claim 1, wherein the heat dissipating substrate includes any one of an aluminum nitride substrate, an alumina substrate, a silicon nitride substrate, and a metal base substrate including a metal plate including a ceramic or resin insulating layer on at least one of the first and second principal surfaces thereof, and the wiring substrate includes either a low temperature co-fired ceramic substrate or a resin substrate.
›9.↳ 1The semiconductor device according to claim 1, further comprising at least one electronic component mounted on a principal surface of the wiring subst…d2+1
The semiconductor device according to claim 1, further comprising at least one electronic component mounted on a principal surface of the wiring substrate.
›10.↳ 9The semiconductor device according to claim 9, wherein the at least one electronic component is at least one of capacitor, a resistor, and an IC.d3
The semiconductor device according to claim 9, wherein the at least one electronic component is at least one of capacitor, a resistor, and an IC.
›11.↳ 1The semiconductor device according to claim 1, wherein the semiconductor element is a Field Effect Transistor.d2
The semiconductor device according to claim 1, wherein the semiconductor element is a Field Effect Transistor.
›12.↳ 1The semiconductor device according to claim 1, wherein the heat dissipating substrate has a thermal conductivity of about 10 W/(m·K) or more.d2
The semiconductor device according to claim 1, wherein the heat dissipating substrate has a thermal conductivity of about 10 W/(m·K) or more.
›13.↳ 1The semiconductor device according to claim 1, further comprising at least one bonding pad arranged to fix the heat dissipating substrate and the wiri…d2
The semiconductor device according to claim 1, further comprising at least one bonding pad arranged to fix the heat dissipating substrate and the wiring substrate to each other.
›14.↳ 1The semiconductor device according to claim 1, wherein the wiring substrate 5 has a thermal conductivity of about 5 W/(m·K) or less.d2
The semiconductor device according to claim 1, wherein the wiring substrate 5 has a thermal conductivity of about 5 W/(m·K) or less.
›15.↳ 1The semiconductor device according to claim 1, wherein the wiring conductor is about 100 μm thick or more.d2
The semiconductor device according to claim 1, wherein the wiring conductor is about 100 μm thick or more.
›16.↳ 1The semiconductor device according to claim 1, wherein the heat dissipating substrate includes a metal base substrate that includes a metal plate and …d2+2
The semiconductor device according to claim 1, wherein the heat dissipating substrate includes a metal base substrate that includes a metal plate and ceramic insulating layers disposed on both principal surfaces of the metal plate.
›17.↳ 16The semiconductor device according to claim 16, wherein the metal plate is made of silver or copper.d3
The semiconductor device according to claim 16, wherein the metal plate is made of silver or copper.
›18.↳ 16The semiconductor device according to claim 16, wherein the heat dissipating substrate has a thermal conductivity of about 50 W/(m·K) or more.d3
The semiconductor device according to claim 16, wherein the heat dissipating substrate has a thermal conductivity of about 50 W/(m·K) or more.
›19.↳ 1The semiconductor device according to claim 1, wherein the lower-surface electrode of the semiconductor element is directly opposed to and facing the …d2
The semiconductor device according to claim 1, wherein the lower-surface electrode of the semiconductor element is directly opposed to and facing the at least one of the first and second principal surfaces of the heat dissipating substrate.
›20.↳ 1The semiconductor device according to claim 1, wherein the heat dissipating substrate, the electric insulator, the outer conductor, and the wiring sub…d2
The semiconductor device according to claim 1, wherein the heat dissipating substrate, the electric insulator, the outer conductor, and the wiring substrate are arranged in this order from bottom to top.
