USPatentGranted
B2

Device and method for testing semiconductor device

Granted 14 Oct 2014 · 2 office actions

Life of the patent

3 dated events
⤢ drag to zoomJul 2011Jan 2012Jul 2012Jan 2013Jul 2013Jan 2014Jul 2014Prosecution
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Abstract

A testing method for testing a semiconductor device includes heating the semiconductor device until the temperature of the semiconductor device reaches a predetermined temperature; conducting other functional tests other than testing of the overheat protection function in a second step after the temperature of the semiconductor device has reached the predetermined temperature; allowing the semiconductor device to generate heat by itself such that the overheat protection function of the semiconductor device is activated, detecting a first diode forward voltage of a desired diode contained in the semiconductor device when the overheat protection function of the semiconductor device is activated and computing a first computational temperature of the semiconductor device based on the detected first diode forward voltage of the desired diode contained in the semiconductor device; and determining whether the computed first computational temperature of the semiconductor device resides in the overheat protection function activating temperature range.

Claims

7 · 3 independent · depth 2
1234567
7 granted claims

Classifications

7 codes
IPC · International Patent Classification
Section G — Physics
  • G01R31/10
  • G01R31/28
  • G01R31/02
Section H — Electricity
  • H01L35/00
USPC · US Patent Classification
324/750.14324/537327/513

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File wrapper

Pendency
3.2 y
1,166 days filing → grant
Office actions
1
non-final + final
Responses
1
no RCE
Examiner
Jermele M Hollington
art unit 2858 · TC 2800
Citations: 16 back · 0 forward

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Priority chain

1 priority documents
›Priority documents — 1
TypeDocumentDate
related publicationUS 20120032696 A19 Feb 2012

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