Semiconductor device and manufacturing method thereof

A manufacturing method of a semiconductor device, comprising the steps of:nforming a gate electrode over a substrate;forming a semiconductor film comprising an oxide semiconductor over the substrate; andheating the gate electrode and the oxide semiconductor by irradiation of light to increase crystallinity in the oxide semiconductor,wherein the semiconductor film is adjacent to the gate electrode with an insulating film interposed therebetween, andwherein the oxide semiconductor is In—Ga—Zn—O based oxide semiconductor,wherein the semiconductor film comprises a first region and a second region,wherein the gate electrode is closer to the first region than the second region, andwherein a crystallinity of the first region is higher than a crystallinity of the second region.

A manufacturing method of a semiconductor device, comprising the steps of:nforming a gate electrode over a substrate;forming a wiring over the substrate;forming a semiconductor film comprising an oxide semiconductor over the substrate; andheating the gate electrode and the oxide semiconductor by irradiation of light to increase crystallinity in the oxide semiconductor,wherein the semiconductor film is adjacent to the gate electrode with an insulating film interposed therebetween,wherein the insulating film has single layer or multiple layer,wherein the oxide semiconductor is In—Ga—Zn—O based oxide semiconductor,wherein the semiconductor film comprises a first region and a second region,wherein the gate electrode is closer to the first region than the second region, andwherein a crystallinity of the first region is higher than a crystallinity of the second region.

A manufacturing method of a semiconductor device, comprising the steps of:nforming a gate electrode over a substrate;forming a semiconductor film comprising an oxide semiconductor over the substrate, wherein the semiconductor film has a thickness of 25 to 200 nm;forming a wiring over the substrate; andheating the gate electrode and the oxide semiconductor by irradiation of light to increase crystallinity in the oxide semiconductor,wherein the semiconductor film is adjacent to the gate electrode with an insulating film interposed therebetween,wherein the oxide semiconductor is In—Ga—Zn—O based oxide semiconductor,wherein the semiconductor film comprises a first region and a second region,wherein the gate electrode is closer to the first region than the second region, andwherein a crystallinity of the first region is higher than a crystallinity of the second region.

A manufacturing method of a semiconductor device, comprising the steps of:nforming a gate electrode over a substrate;forming a semiconductor film comprising an oxide semiconductor over the substrate; andheating the gate electrode at 250° C. to 570° C. to improve crystallinity of a channel region of the semiconductor film,wherein the semiconductor film is adjacent to the gate electrode with an insulating film interposed therebetween,wherein the oxide semiconductor is In—Ga—Zn—O based oxide semiconductor,wherein the semiconductor film comprises a first region and a second region,wherein the gate electrode is closer to the first region than the second region, andwherein a crystallinity of the first region is higher than a crystallinity of the second region.