USPatentGranted
B2

Semiconductor device and method of fabricating the same

Granted 25 Mar 2014 · no office action yet

Current assignee: Semiconductor Energy Laboratory Co., Ltd. · originally Semiconductor Energy Laboratory

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Inventors: Yuko Kobayashi, Shunpei Yamazaki, Yuugo Goto, Yoshiharu Hirakata · Examiner: Matthew Landau · AU 2891 · TC 2800

Life of the patent

3 dated events
⤢ drag to zoomJan 2012Apr 2012Jul 2012Oct 2012Jan 2013Apr 2013Jul 2013Oct 2013Jan 2014Apr 2014Prosecution
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Abstract

There is provided a high quality liquid crystal panel having a thickness with high accuracy, which is designed, without using a particulate spacer, within a free range in accordance with characteristics of a used liquid crystal and a driving method, and is also provided a method of fabricating the same. The shape of a spacer for keeping a substrate interval constant is made such that it is a columnar shape, a radius R of curvature is 2 μm or less, a height H is 0.5 μm to 10 μm, a diameter is 20 μm or less, and an angle α is 65° to 115°. By doing so, it is possible to prevent the lowering of an opening rate and the lowering of light leakage due to orientation disturbance.

Claims

24 · 5 independent · depth 2
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24 granted claims

Classifications

4 codes
IPC · International Patent Classification
Section H — Electricity
  • H01L27/108
  • H01L29/94
USPC · US Patent Classification
257/296257/E27.106

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File wrapper

Pendency
2.2 y
788 days filing → grant
Office actions
0
after a restriction
Responses
1
5 RCE
Examiner
Matthew Landau
art unit 2891 · TC 2800
Citations: 231 back · 0 forward

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Priority chain

1 priority documents
›Priority documents — 1
TypeDocumentDate
related publicationUS 20120120336 A117 May 2012

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