A memory component includes: a first electrode; a memory layer; and a second electrode in this order, wherein the memory layer includes a high resistance layer which includes tellurium (Te) as the chief component among anion components and is formed on the first electrode side; and an ion source layer which includes at least one kind of metal element and at least one kind of chalcogen element among tellurium (Te), sulfur (S) and selenium (Se) and is formed on the second electrode side.

Claims

14 · 2 independent · depth 3

14 granted claims

›1.independentA memory component comprising:na first electrode;a second electrode; anda memory layer between the first and second electrodes,wherein:nthe memory lay…+12

›2.↳ 1The memory component according to claim 1, wherein the first one of the plurality of layers is at the first electrode side, and the second one of the …d2

›3.↳ 1The memory component according to claim 1, wherein the first one of the plurality of the layers of the resistance change layer is at the ion source la…d2

›4.↳ 1The memory component according to claim 1, wherein the resistance change layer has a resistance value that is higher than that of the ion source layer…d2

›5.↳ 1The memory component according to claim 1, wherein the at least one kind of metal element in the ion source layer includes aluminum (Al).d2

›6.↳ 1The memory component according to claim 1, wherein a conduction path is formed inside the resistance change layer when the ionized metal element is di…d2

›7.↳ 1The memory component of claim 1, wherein the plurality of layers of the resistance change layer is two layers.d2+1

›9.↳ 1The memory component of claim 1, wherein the plurality of layers of the resistance change layer is more than two layers.d2

›10.↳ 1The memory component of claim 1, wherein a resistance value of the resistance change layer is a sum of resistance values of individual layers within t…d2

›11.↳ 1The memory component of claim 1, wherein a layer of the plurality of layers that includes Te as the chief component among the anion components is in c…d2

›12.↳ 1The memory component of claim 1, wherein the at least one kind of metal element in the ion source layer includes copper (Cu).d2

›13.↳ 1The memory component of claim 1, wherein the at least one kind of metal element in the ion source layer includes aluminum (Al) and copper (Cu).d2

›14.independentA memory device comprising:na plurality of memory components each of which has a first electrode, a second electrode, and a memory layer between the f…

Classifications

5 codes

IPC · International Patent Classification

Section H — Electricity

H01L47/00
H01L29/04

USPC · US Patent Classification

257/4257/3257/E45.003

Claim changes

Soon

Coming soonHow the claims changed between publication and grant

See which claims were amended, added or cancelled during examination, with every added and removed word marked.

AmendedAddedCancelledUnchanged

The published claims of this patent are not paired with the granted ones in what we hold.

File wrapper

⤢ drag to zoom

USPTOApplicanthover for detail · click to open

Pendency

3.2 y

1,161 days filing → grant

Office actions

non-final + final

Responses

1 RCE

Interviews

examiner interview summaries

Examiner

Daniel Luke

art unit 2813 · TC 2800

Law firm

Law firm · Log in to unlock

Citations: 15 back · 0 forward

See the full prosecution history — every USPTO and applicant action on this file, in order.

Term & fees

See the term timeline — pendency span, in-force span, the maintenance fees paid and both computed expiry dates.

Priority chain

1 priority documents

›Priority documents — 1

Type	Document	Date
related publication	US 20110175049 A1	21 Jul 2011

Validity challenges

See the validity challenges on record — reexaminations, IPRs and PGRs, with their institution decisions and outcomes.

Citations

See every patent this one cites and every patent that cites it back — publication, assignee, and how each one was found.