Array substrate of TFT-LCD including a black matrix and method for manufacturing the same

The array substrate of the TFT-LCD according to claim 1, wherein the thin film transistor comprises a gate electrode, an active layer, a source electrode and a drain electrode, and a passivation layer is formed on the thin film transistor and covers the base substrate.

The array substrate of the TFT-LCD according to claim 1, wherein the black matrix comprises a portion of the black matrix located above the gate line and/or the data line.

The array substrate of the TFT-LCD according to claim 1, wherein the black matrix is made of a metal thin film material.

The array substrate of the TFT-LCD according to claim 1, wherein the black matrix is made of a carbon nanotube material.

The array substrate of the TFT-LCD according to claim 1, wherein the conductivity of the conductive material for forming the black matrix is higher than that of the common electrode.

The array substrate of the TFT-LCD according to claim 1, wherein the black matrix is directly electrically connected with the common electrode.

The method according to claim 13, wherein the forming of the gate line, the data line, the pixel electrode, and the thin film transistor comprises:ndepositing a gate metal thin film on the base substrate, and patterning the gate metal thin film to form the gate line and a gate electrode;depositing a gate insulating layer, a semiconductor thin film and a doped semiconductor thin film in sequence on the base substrate, and forming an active layer for the thin film transistors by a patterning process, wherein the active layer comprises the semiconductor layer and doped semiconductor layer and is formed on the gate insulating layer and above the gate electrode;depositing a transparent conductive thin film on the base substrate and patterning the transparent conductive thin film to form the pixel electrode; anddepositing a source and drain metal thin film on the base substrate and patterning the source and drain metal thin film to form the data line, and a source electrode, a drain electrode and a channel region of the thin film transistor, wherein one end of the source electrode is located on the active layer, and the other end is connected with the data line, one end of the drain electrode is located on the active layer, and the other end is directly connected with the pixel electrode, and the channel region is defined between the source electrode and the drain electrode.

The method of claim 13, wherein the forming of the common electrode and the black matrix comprises:ndepositing a passivation layer and a transparent conductive thin film on the base substrate after step 1, and patterning the transparent conductive thin film to form the common electrode, wherein the common electrode comprises a plurality of strip electrodes arranged in sequence; anddepositing a black matrix conductive thin film on the base substrate on which the common electrode has formed, and patterning the black matrix conductive thin film to form the black matrix, wherein the black matrix is electrically connected with the common electrode.

The method of claim 13, wherein the forming of the common electrode and the black matrix comprises:ndepositing a passivation layer on the base substrate after step 1, and then depositing the transparent conductive thin film and the black matrix conductive thin film in sequence;coating a photoresist layer on the black matrix conductive thin film;exposing the photoresist layer by using a half-tone mask plate or a gray-tone mask plate, developing the photoresist layer to form a completely remained photoresist region, a completely removed photoresist region, and a partially remained photoresist region, wherein the completely remained photoresist region corresponds to the region in which the black matrix pattern exists, the partially remained photoresist region corresponds to the region in which the common electrode pattern exists, and the completely removed photoresist region corresponds to the region except for the above patterns;etching the black matrix conductive thin film and the transparent conductive thin film in the completely removed photoresist region by a first etch process to form the black matrix;removing the photoresist in the partially remained photoresist region by an ashing process, to expose the black matrix conductive thin film in this region;completely removing the black matrix conductive thin film in the partially remained photoresist region by a second etching process to form the common electrode; andremoving the remaining photoresist.

The method of claim 13, wherein the forming of the common electrode and the black matrix comprise:ndepositing a passivation layer and a black matrix conductive thin film on the base substrate after step 1, and patterning the black matrix conductive thin film to form the black matrix; anddepositing a transparent conductive thin film on the base substrate on which the black matrix has been formed, and patterning a transparent conductive thin film to form the common electrode, wherein the common electrode comprise a plurality of strip electrodes arranged in sequence and are electrically connected with the black matrix.

The method of claim 13, wherein the black matrix conductive thin film is made of a metal thin film material or a carbon nanotube material.

The method of claim 13, wherein the conductivity of the conductive thin film material for forming the black matrix is higher than that of the common electrode.