A light emitting device which is capable of suppressing deterioration by diffusion of impurities such as moisture, oxygen, alkaline metal and alkaline earth metal, and concretely, a flexible light emitting device which has light emitting element formed on a plastic substrate. On the plastic substrate, disposed are two layers and more of barrier films comprising a layer represented by AlNxOy which is capable of blocking intrusion of moisture and oxygen in a light emitting layer and blocking intrusion of impurities such as an alkaline metal and an alkaline earth metal in an active layer of TFT, and further, a stress relaxation film containing resin is disposed between two layers of barrier films.

Claims

33 · 3 independent · depth 2

33 granted claims

›1.independentA light emitting device comprising:na first substrate;a first insulating layer over the first substrate;a second insulating layer over the first insul…+10

›2.↳ 1The light emitting device according to claim 1, wherein the light emitting element is covered by a third layer comprising Al, N and O.d2

›3.↳ 1The light emitting device according to claim 1, further comprising a first layer comprising Al, N and O over the first substrate, and a second layer c…d2

›4.↳ 1The light emitting device according to claim 1, further comprising a first layer comprising Al, N and O over the first substrate, and a second layer c…d2

›5.↳ 1The light emitting device according to claim 1, further comprising a first layer comprising Al, N and O over the first substrate, and a second layer c…d2

›6.↳ 1The light emitting device according to claim 1, wherein at least one of the first substrate and the second substrate comprises at least one of polyeth…d2

›7.↳ 1The light emitting device according to claim 1, wherein each of the first transistor and the second transistor comprises a semiconductor film comprisi…d2

›8.↳ 1The light emitting device according to claim 1, wherein the second electrode comprises ITO.d2

›9.↳ 1The light emitting device according to claim 1, wherein the organic material layer comprises organic resin.d2

›10.↳ 1The light emitting device according to claim 1, further comprising a layer comprising an organic resin in contact with an end portion of the second su…d2

›11.↳ 1The light emitting device according to claim 1, wherein the organic material layer is in contact with an end portion of the second electrode.d2

›12.independentA light emitting device comprising:na first substrate;a first insulating layer over the first substrate;a second insulating layer over the first insul…+10

›13.↳ 12The light emitting device according to claim 12, further comprising a layer comprising Al, N and O over the first substrate wherein the layer comprisi…d2

›14.↳ 12The light emitting device according to claim 12, further comprising a layer comprising Al, N and O over the first substrate, wherein the layer compris…d2

›15.↳ 12The light emitting device according to claim 12, further comprising a layer comprising Al, N and O over the first substrate, wherein the layer compris…d2

›16.↳ 12The light emitting device according to claim 12, wherein at least one of the first substrate and the second substrate comprises at least one of polyet…d2

›17.↳ 12The light emitting device according to claim 12, wherein each of the first transistor and the second transistor comprises a semiconductor film compris…d2

›18.↳ 12The light emitting device according to claim 12, wherein the second electrode comprises ITO.d2

›19.↳ 12The light emitting device according to claim 12, wherein the organic material layer comprises organic resin.d2

›20.↳ 12The light emitting device according to claim 12, wherein an end portion of the first electrode is covered by a bank.d2

›21.↳ 12The light emitting device according to claim 12, further comprising a layer comprising an organic resin in contact with an end portion of the second s…d2

›22.↳ 12The light emitting device according to claim 12, wherein the organic material layer is in contact with an end portion of the second electrode.d2

›23.independentA light emitting device comprising:na first substrate;a first insulating layer over the first substrate;a second insulating layer over the first insul…+10

›24.↳ 23The light emitting device according to claim 23, further comprising a first layer comprising Al, N and O over the first substrate, and a second layer …d2

›25.↳ 23The light emitting device according to claim 23, further comprising a first layer comprising Al, N and O over the first substrate, and a second layer …d2

›26.↳ 23The light emitting device according to claim 23, further comprising a first layer comprising Al, N and O over the first substrate, and a second layer …d2

›27.↳ 23The light emitting device according to claim 23, wherein at least one of the first substrate and the second substrate comprises at least one of polyet…d2

›28.↳ 23The light emitting device according to claim 23, wherein each of the first transistor and the second transistor comprises a semiconductor film compris…d2

›29.↳ 23The light emitting device according to claim 23, wherein the second electrode comprises ITO.d2

›30.↳ 23The light emitting device according to claim 23, wherein the organic material layer comprises organic resin.d2

›31.↳ 23The light emitting device according to claim 23, wherein an end portion of the first electrode is covered by a bank.d2

›32.↳ 23The light emitting device according to claim 23, further comprising a layer comprising an organic resin in contact with an end portion of the second s…d2

›33.↳ 23The light emitting device according to claim 23, wherein the organic material layer is in contact with an end portion of the second electrode.d2

Classifications

6 codes

IPC · International Patent Classification

Section H — Electricity

H01L51/30

USPC · US Patent Classification

257/40257/E51.013257/E51.09257/E51.018257/79

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3.8 y

1,376 days filing → grant

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non-final + final

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Minchul Yang

art unit 2891 · TC 2800

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›Priority documents — 1

Type	Document	Date
related publication	US 20100163859 A1	1 Jul 2010

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