Semiconductor device and manufacturing method thereof

A method of manufacturing a semiconductor device comprising the steps of:nforming a gate electrode over a substrate;forming an insulating film over the gate electrode;forming an oxide semiconductor film over the gate electrode with the insulating film interposed between the oxide semiconductor film and the gate electrode; andheating the oxide semiconductor film at a temperature of 250 to 570° C. to crystallize at least a portion of the oxide semiconductor film,wherein, after the heating step, the oxide semiconductor film comprises an In—Ga—Zn—O based oxide semiconductor in both amorphous and polycrystalline states.

A method of manufacturing a semiconductor device comprising the steps of:nforming a gate electrode over a substrate;forming an insulating film over the gate electrode;forming an oxide semiconductor film over the gate electrode with the insulating film interposed between the oxide semiconductor film and the gate electrode;heating the oxide semiconductor film to crystallize at least a portion of the oxide semiconductor film;forming a source electrode and a drain electrode on the oxide semiconductor film; andforming a passivation film over at least the oxide semiconductor film and the source electrode and the drain electrode,wherein each of the source electrode and the drain electrode comprises a titanium film in contact with a surface of the oxide semiconductor film and a second conductive film comprising aluminum or aluminum alloy on the titanium film,wherein, after the heating step, the oxide semiconductor film comprises an In—Ga—Zn—O based oxide semiconductor in both amorphous and polycrystalline states, andwherein the step of heating is performed at a temperature of 250 to 570° C.

A method of manufacturing a semiconductor device comprising the steps of:nforming a gate electrode over a substrate;forming an insulating film over the gate electrode;forming an oxide semiconductor film over the gate electrode with the insulating film interposed between the oxide semiconductor film and the gate electrode;patterning the oxide semiconductor film; andheating the patterned oxide semiconductor film at a temperature of 250 to 570° C. to crystallize at least a portion of the oxide semiconductor film,wherein, after the heating step, the oxide semiconductor film comprises an In—Ga—Zn—O based oxide semiconductor in both amorphous and polycrystalline states.

A method of manufacturing a semiconductor device comprising the steps of:nforming a gate electrode over a substrate;forming an insulating film over the gate electrode;forming an oxide semiconductor film over the gate electrode with the insulating film interposed between the oxide semiconductor film and the gate electrode;patterning the oxide semiconductor film;heating the patterned oxide semiconductor film at a temperature of 250 to 570° C. to crystallize at least a portion of the oxide semiconductor film, andforming a passivation film over the oxide semiconductor film by sputtering,wherein, after the heating step, the oxide semiconductor film comprises an In—Ga—Zn—O based oxide semiconductor in both amorphous and polycrystalline states.

A method of manufacturing a semiconductor device comprising the steps of:nforming a gate electrode over a substrate;forming an insulating film over, the gate electrode;forming an oxide semiconductor film over the gate electrode with the insulating film interposed between the oxide semiconductor film and the gate electrode;patterning the oxide semiconductor film; andheating the patterned oxide semiconductor film at a temperature of 250 to 570° C. to crystallize at least a portion of the oxide semiconductor film,wherein, after the heating step, the oxide semiconductor film comprises an In—Ga—Zn—O based oxide semiconductor in both amorphous and polycrystalline states,wherein the heating step comprises a preheating state and a main heating state after the preheating, andwherein a temperature gradient in the main heating state is larger than a temperature gradient in the preheating state.

A method of manufacturing a semiconductor device comprising the steps of:nforming a gate electrode over a substrate;forming an insulating film over the gate electrode;forming an oxide semiconductor film over the gate electrode with the insulating film interposed between the oxide semiconductor film and the gate electrode;heating the oxide semiconductor film at a temperature of 250 to 570° C. to crystallize at least a portion of the oxide semiconductor film; andpatterning the oxide semiconductor film after heating the oxide semiconductor film,wherein, after the heating step, the oxide semiconductor film comprises an In—Ga—Zn—O based oxide semiconductor in both amorphous and polycrystalline states.

A method of manufacturing a semiconductor device comprising the steps of:nforming a gate electrode over a substrate;forming an insulating film over the gate electrode;forming an oxide semiconductor film over the gate electrode with the insulating film interposed between the oxide semiconductor film and the gate electrode;heating the oxide semiconductor film at a temperature of 250 to 570° C. to crystallize at least a portion of the oxide semiconductor film;patterning the oxide semiconductor film after heating the oxide semiconductor film; andforming a passivation film over the oxide semiconductor film by sputtering,wherein, after the heating step, the oxide semiconductor film comprises an In—Ga—Zn—O based oxide semiconductor in both amorphous and polycrystalline states.

A method of manufacturing a semiconductor device comprising the steps of:nforming a gate electrode over a substrate;forming an insulating film over the gate electrode;forming an oxide semiconductor film over the gate electrode with the insulating film interposed between the oxide semiconductor film and the gate electrode;heating the oxide semiconductor film at a temperature of 250 to 570° C. to crystallize at least a portion of the oxide semiconductor film; andpatterning the oxide semiconductor film after heating the oxide semiconductor film,wherein, after the heating step, the oxide semiconductor film comprises an In—Ga—Zn—O based oxide semiconductor in both amorphous and polycrystalline states,wherein the heating step comprises a preheating state and a main heating state after the preheating, andwherein a temperature gradient in the main heating state is larger than a temperature gradient in the preheating state.

A method of manufacturing a semiconductor device comprising the steps of:nforming a gate electrode over a substrate;forming a first insulating film over the gate electrode;forming a second insulating film over the first insulating film;forming an oxide semiconductor film over the gate electrode with the first and second insulating films interposed between the oxide semiconductor film and the gate electrode;heating the oxide semiconductor film at a temperature of 250 to 570° C. to crystallize at least a portion of the oxide semiconductor film;patterning the oxide semiconductor film after heating the oxide semiconductor film; andforming a passivation film over the oxide semiconductor film by sputtering,wherein, after the heating step, the oxide semiconductor film comprises an In—Ga—Zn—O based oxide semiconductor in both amorphous and polycrystalline states, andwherein the first insulating film and the second insulating film are fanned consecutively in the same chamber without breaking a vacuum and under the same temperature.

A method of manufacturing a semiconductor device comprising the steps of:nforming a gate electrode over a substrate;forming a first insulating film comprising silicon nitride over the gate electrode;forming a second insulating film comprising silicon oxide over the first insulating film;forming an oxide semiconductor film over the gate electrode with the first and second insulating films interposed between the oxide semiconductor film and the gate electrode;heating the oxide semiconductor film at a temperature of 250 to 570° C. to crystallize at least a portion of the oxide semiconductor film;patterning the oxide semiconductor film after heating the oxide semiconductor film; andforming a passivation film over the oxide semiconductor film by sputtering,wherein, after the heating step, the oxide semiconductor film comprises an In—Ga—Zn—O based oxide semiconductor in both amorphous and polycrystalline states, andwherein the first insulating film and the second insulating film are formed consecutively in the same chamber without breaking a vacuum and under the same temperature.

A method of manufacturing a semiconductor device comprising the steps of:nforming a gate electrode over a substrate;forming an insulating film over the gate electrode;forming an oxide semiconductor film over the gate electrode with the insulating film interposed between the oxide semiconductor film and the gate electrode;heating the oxide semiconductor film at a temperature of 250 to 570° C. to crystallize at least a portion of the oxide semiconductor film;forming a source electrode and a drain electrode on the oxide semiconductor film; andforming a passivation film over at least the oxide semiconductor film and the source electrode and the drain electrode,wherein, after the heating step, the oxide semiconductor film comprises an In—Ga—Zn—O based oxide semiconductor in both amorphous and polycrystalline states, andwherein each of the source electrode and the drain electrode comprises a metal nitride film in contact with a surface of the oxide semiconductor film and a second conductive film comprising aluminum or aluminum alloy on the metal nitride film.

A method of manufacturing a semiconductor device comprising the steps of:nforming a gate electrode over a substrate;forming an insulating film over the gate electrode;forming an oxide semiconductor film over the gate electrode with the insulating film interposed between the oxide semiconductor film and the gate electrode;heating the oxide semiconductor film by lamp heating to crystallize at least a portion of the oxide semiconductor film; andpatterning the oxide semiconductor film after heating the oxide semiconductor film,wherein, after the heating step, the oxide semiconductor film comprises an In—Ga—Zn—O based oxide semiconductor in both amorphous and polycrystalline states, andwherein each of the insulating film and the oxide semiconductor film is formed by sputtering using at least oxygen gas.

A method of manufacturing a semiconductor device comprising the steps of:nforming a gate electrode over a substrate;forming an insulating film over the gate electrode;forming an oxide semiconductor film over the gate electrode with the insulating film interposed between the oxide semiconductor film and the gate electrode; andheating the oxide semiconductor film at a temperature of 250 to 570° C. to crystallize at least a portion of the oxide semiconductor film,wherein each of the insulating film and the oxide semiconductor film is formed by sputtering using at least oxygen gas, andwherein, after the heating step, the oxide semiconductor film comprises an In—Ga—Zn—O based oxide semiconductor in both amorphous and polycrystalline states.

A method of manufacturing a semiconductor device comprising the steps of:nforming a gate electrode over a substrate;forming an insulating film over the gate electrode;forming an oxide semiconductor film over the gate electrode with the insulating film interposed between the oxide semiconductor film and the gate electrode;heating the oxide semiconductor film to crystallize at least a portion of the oxide semiconductor film;forming a source electrode and a drain electrode on the oxide semiconductor film; andforming a passivation film over at least the oxide semiconductor film and the source electrode and the drain electrode,wherein each of the source electrode and the drain electrode comprises a titanium film in contact with a surface of the oxide semiconductor film and a second conductive film comprising aluminum or aluminum alloy on the titanium film,wherein each of the insulating film and the oxide semiconductor film is formed by sputtering using at least oxygen gas,wherein, after the heating step, the oxide semiconductor film comprises an In—Ga—Zn—O based oxide semiconductor in both amorphous and polycrystalline states, andwherein the step of heating is performed at a temperature of 250 to 570° C.

A method of manufacturing a semiconductor device comprising the steps of:nforming a gate electrode over a substrate;forming an insulating film over the gate electrode;forming an oxide semiconductor film over the gate electrode with the insulating film interposed between the oxide semiconductor film and the gate electrode;patterning the oxide semiconductor film; andheating the patterned oxide semiconductor film at a temperature of 250 to 570° C. to crystallize at least a portion of the oxide semiconductor film,wherein the insulating film is formed by sputtering using at least oxygen gas and the oxide semiconductor film is formed by sputtering using at least oxygen gas, andwherein, after the heating step, the oxide semiconductor film comprises an In—Ga—Zn—O based oxide semiconductor in both amorphous and polycrystalline states.

A method of manufacturing a semiconductor device comprising the steps of:nforming a gate electrode over a substrate;forming an insulating film over the gate electrode;forming an oxide semiconductor film over the gate electrode with the insulating film interposed between the oxide semiconductor film and the gate electrode;heating the oxide semiconductor film at a temperature of 250 to 570° C. to crystallize at least a portion of the oxide semiconductor film; andpatterning the oxide semiconductor film after heating the oxide semiconductor film,wherein, after the heating step, the oxide semiconductor film comprises an In—Ga—Zn—O based oxide semiconductor in both amorphous and polycrystalline states, andwherein the insulating film is formed by sputtering using at least oxygen gas and the oxide semiconductor film is formed by sputtering using at least oxygen gas.