Memory device and semiconductor device
Granted 1 Oct 2013 · 12 office actions
Assignee: Semiconductor Energy Laboratory
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Attorney: Attorney · Log in to unlock
Inventors: Yasuko Watanabe, Yasuyuki Arai, Yoshitaka Moriya · Examiner: John P Dulka
Life of the patent
23 dated eventsAbstract
The present invention is to provide a semiconductor device in which the step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed. A semiconductor device of the present invention includes an antenna, a storage element, and a transistor, wherein a conductive layer serving as an antenna is provided in the same layer as a conductive layer of the transistor or the storage element. This characteristic makes it possible to omit an independent step of forming the conductive layer serving as an antenna and to conduct the step of forming the conductive layer serving as an antenna at the same time as the step of forming a conductive layer of another element. Therefore, the manufacturing step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed.
Claims
8 · 2 independent · depth 2Classifications
8 codes- H01L29/08
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1 priority documents›Priority documents — 1
| Type | Document | Date |
|---|---|---|
| related publication | US 20080121874 A1 | 29 May 2008 |
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