USPatentGranted
B2

Memory device and semiconductor device

Granted 1 Oct 2013 · 12 office actions

Life of the patent

23 dated events
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Abstract

The present invention is to provide a semiconductor device in which the step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed. A semiconductor device of the present invention includes an antenna, a storage element, and a transistor, wherein a conductive layer serving as an antenna is provided in the same layer as a conductive layer of the transistor or the storage element. This characteristic makes it possible to omit an independent step of forming the conductive layer serving as an antenna and to conduct the step of forming the conductive layer serving as an antenna at the same time as the step of forming a conductive layer of another element. Therefore, the manufacturing step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed.

Claims

8 · 2 independent · depth 2
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8 granted claims

Classifications

8 codes
IPC · International Patent Classification
Section H — Electricity
  • H01L29/08
USPC · US Patent Classification
257/40438/152438/28257/4257/E51.003257/E51.005349/151

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File wrapper

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Pendency
7.7 y
2,811 days filing → grant
Office actions
6
after a restriction
Responses
4
4 RCE
Interviews
1
examiner interview summaries
Examiner
John P Dulka
art unit —
Citations: 56 back · 0 forward

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Priority chain

1 priority documents
›Priority documents — 1
TypeDocumentDate
related publicationUS 20080121874 A129 May 2008

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Citations

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