USPatentGranted
B2

Semiconductor device including multiple insulating films

Granted 3 Sep 2013 · no office action yet

Current assignee: Semiconductor Energy Laboratory Co., Ltd. · originally Semiconductor Energy Laboratory

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Inventors: Kiyoshi Kato, Takashi Hirosure, Saishi Fujikawa, Satoshi Murakami +3 · Examiner: Ida M Soward · AU 2822 · TC 2800

Life of the patent

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Abstract

A semiconductor display device is formed including an interlayer insulating. Specifically, a TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.

Claims

20 · 4 independent · depth 4
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20 granted claims

Classifications

25 codes
IPC · International Patent Classification
Section H — Electricity
  • H01L23/48
  • H01L31/112
  • H01L31/113
  • H01L29/15
  • H01L29/04
  • H01L29/76
  • H01L23/52
  • H01L29/10
  • H01L29/40
  • H01L31/20
  • H01L31/036
  • H01L31/0376
  • H01L31/062
USPC · US Patent Classification
257/72257/57257/E29.273257/775257/774257/E29.202257/59257/66257/E29.137257/E29.117257/E29.151257/291

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File wrapper

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Pendency
1.6 y
568 days filing → grant
Office actions
0
after a restriction
Responses
1
1 RCE
Examiner
Ida M Soward
art unit 2822 · TC 2800
Citations: 373 back · 0 forward

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Priority chain

1 priority documents
›Priority documents — 1
TypeDocumentDate
related publicationUS 20120205658 A116 Aug 2012

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