Selecting PA bias levels of RF PA circuitry during a multislot burst

Circuitry comprising:npower amplifier (PA) control circuitry adapted to:nselect one PA bias level of radio frequency (RF) PA circuitry during one slot of a multislot transmit burst from the RF PA circuitry, such that the RF PA circuitry has one output power level during the one slot and has a next output power level during an adjacent next slot of the multislot transmit burst;if the one output power level exceeds the next output power level by more than a power drop limit, then maintain the one PA bias level during the adjacent next slot; andif the one output power level significantly exceeds the next output power level, but by less than the power drop limit, then select a next PA bias level, which is less than the one PA bias level, during the adjacent next slot; andPA bias circuitry adapted to provide the one PA bias level and the next PA bias level.

A method comprising:nproviding power amplifier (PA) control circuitry and PA bias circuitry;selecting one PA bias level of radio frequency (RF) PA circuitry during one slot of a multislot transmit burst from the RF PA circuitry, such that the RF PA circuitry has one output power level during the one slot and has a next output power level during an adjacent next slot of the multislot transmit burst;if the one output power level exceeds the next output power level by more than a power drop limit, then maintaining the one PA bias level during the adjacent next slot;if the one output power level significantly exceeds the next output power level, but by less than the power drop limit, then selecting a next PA bias level, which is less than the one PA bias level, during the adjacent next slot; andproviding the one PA bias level and the next PA bias level.