A nonvolatile semiconductor memory device according to embodiment includes: a semiconductor substrate having an upper portion being partitioned into a plurality of semiconductor portions extending in a first direction; a charge storage film provided on the semiconductor portion; a word-line electrode provided on the semiconductor substrate and extending in a second direction intersecting with the first direction; and a pair of selection gate electrodes provided on both sides of the word-line electrode in the first direction on the semiconductor substrate and extending in the second direction, a shortest distance between a corner portion of each of the semiconductor portions and each of the selection gate electrodes being longer than a shortest distance between the corner portion of the semiconductor portion and the word-line electrode in a cross section parallel to the second direction.

Claims

12 · 1 independent · depth 4

12 granted claims

›1.independentA nonvolatile semiconductor memory device comprising:na semiconductor substrate having an upper portion being partitioned into a plurality of semicond…+11

›2.↳ 1The device according to claim 1, further comprising;na plurality of element isolation insulating films formed in the upper portion of the semiconducto…d2+5

›3.↳ 2The device according to claim 2, whereinnthe upper surface of each of the element isolation insulating films is located higher than an upper surface o…d3

›4.↳ 2The device according to claim 2, further comprising;na tunnel insulating film provided between each of the semiconductor portions and the charge stora…d3+1

›6.↳ 2The device according to claim 2, wherein a region in the upper surface of each of the element isolation insulating films immediately below the word-li…d3

›12.↳ 2The device according to claim 2, wherein a level difference is formed in the upper surface of each of the element isolation insulating films between t…d3

›7.↳ 1The device according to claim 1, further comprising:na tunnel insulating film provided between the semiconductor substrate and the charge storage film…d2+2

›10.↳ 1The device according to claim 1, wherein the word-line electrode and each of the selection gate electrodes each includes:na polysilicon film; andan al…d2

›11.↳ 1The device according to claim 1, wherein the word-line electrode and each of the selection gate electrodes each includes:na metal film made of tantalu…d2

Classifications

7 codes

IPC · International Patent Classification

Section H — Electricity

H01L29/792
H01L21/3205
H01L21/4763

USPC · US Patent Classification

257/324257/E21.21257/E29.309438/591

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File wrapper

Pendency

3.1 y

1,140 days filing → grant

Office actions

after a restriction

Responses

no RCE

Examiner

Fernando L Toledo

art unit 2897 · TC 2800

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Citations: 7 back · 0 forward

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Priority chain

1 priority documents

›Priority documents — 1

Type	Document	Date
related publication	US 20100320527 A1	23 Dec 2010

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