Method of manufacturing semiconductor light emitting element

A method of manufacturing a semiconductor light emitting element comprising following steps of:n(a) forming a multilayered nitride semiconductor layer on a first surface of a first wafer which is configured transmit a first light,nsaid first wafer having the first surface and a second surface which is opposite of said first surface,the multilayered nitride semiconductor layer comprising a first nitride semiconductor layer, and a second nitride semiconductor layer,said first nitride semiconductor layer having a type of n-type or p-type,said second nitride semiconductor layer being disposed on the first nitride semiconductor layer,said second nitride semiconductor layer has a type which is opposite of the type of the first nitride semiconductor layer,said multilayered nitride semiconductor layer has a third surface which is faced with the second surface;(b) bonding a second wafer on the multilayered nitride semiconductor layer, said step of bonding a second wafer being performed after said step of forming a multilayered nitride semiconductor layer,(c) forming a groove having a depth extends from the second surface of said first wafer to at least said multilayered nitride semiconductor layer,nsaid step of forming the groove having a depth being performed after said step of bonding a second wafer on the multilayered nitride semiconductor layer;(d) applying the first light to the third surface of the multilayered nitride semiconductor layer through the first wafer so as to dissolve a nitride semiconductor located in said third surface of said multilayered nitride semiconductor layer,nwhen said nitride semiconductor in the third surface of the multilayered nitride semiconductor layer is dissolved, said nitride semiconductor in the third surface generates a nitrogen gas,said nitrogen gas being discharged to an outside through said groove,when said nitride semiconductor in the third surface of the multilayered nitride semiconductor layer is dissolved, a bonding force between said multilayered nitride semiconductor layer and said first wafer being decreased;(e) separating said first wafer from said first nitride semiconductor layer; and(f) cutting said first nitride semiconductor layer, said second nitride semiconductor layer, and said second wafer along said groove so as to be divided into a plurality of semiconductor light emitting element,nsaid step of cutting said first nitride semiconductor layer being performed after said step of separating said first wafer.