It is an object to manufacture a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. An insulating layer which covers an oxide semiconductor layer of the thin film transistor contains a boron element or an aluminum element. The insulating layer containing a boron element or an aluminum element is formed by a sputtering method using a silicon target or a silicon oxide target containing a boron element or an aluminum element. Alternatively, an insulating layer containing an antimony (Sb) element or a phosphorus (P) element instead of a boron element covers the oxide semiconductor layer of the thin film transistor.

Claims

12 · 3 independent · depth 2

12 granted claims

›1.independentA semiconductor device comprising:na first insulating layer over a substrate;an oxide semiconductor layer over the first insulating layer; anda second…+3

›5.independentA semiconductor device comprising:na first insulating layer over a substrate;an oxide semiconductor layer over the first insulating layer; anda second…+3

›9.independentA semiconductor device comprising:na first insulating layer over a substrate;an oxide semiconductor layer on and in contact with the first insulating …+3

Classifications

7 codes

IPC · International Patent Classification

Section H — Electricity

H01L29/12
H01L29/786

USPC · US Patent Classification

257/43257/E29.132257/E29.273438/104257/E29.068

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Pendency

2.3 y

826 days filing → grant

Office actions

after a restriction

Responses

2 RCE

Examiner

Evan Pert

art unit 2826 · TC 2800

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Citations: 215 back · 0 forward

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Priority chain

1 priority documents

›Priority documents — 1

Type	Document	Date
related publication	US 20110057188 A1	10 Mar 2011

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