USPatentGranted
B2

Memory device with non-volatile memory buffer

Granted 27 Mar 2012 · 8 office actions

Current assignee: Toshiba Memory Corporation · originally Toshiba

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Inventors: Hidetaka Tsuji, Takafumi Ito · Examiner: Shane M Thomas · AU 2186 · TC 2100

Life of the patent

16 dated events
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Abstract

A memory device includes a nonvolatile memory and a controller. The nonvolatile memory includes a storage area having a plurality of memory blocks each including a plurality of nonvolatile memory cells, and a buffer including a plurality of nonvolatile memory cells and configured to temporarily store data, and in which data is erased for each block. If a size of write data related to one write command is not more than a predetermined size, the controller writes the write data to the buffer.

Claims

15 · 1 independent · depth 5
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15 granted claims

Classifications

4 codes
IPC · International Patent Classification
Section G — Physics
  • G06F12/00
USPC · US Patent Classification
711/103711/E12.02711/165

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File wrapper

⤢ drag to zoomJan 2008Jul 2008Jan 2009Jul 2009Jan 2010Jul 2010Jan 2011Jul 2011Jan 2012USPTOApplicantNon-final rejectionFinal rejectionNon-final rejectionFinal rejectionRequest for continued examination
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Pendency
4.3 y
1,566 days filing → grant
Office actions
4
non-final + final
Responses
2
3 RCE
Interviews
2
examiner interview summaries
Examiner
Shane M Thomas
art unit 2186 · TC 2100
Citations: 18 back · 0 forward

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Term & fees

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Priority chain

1 priority documents
›Priority documents — 1
TypeDocumentDate
related publicationUS 20090006725 A11 Jan 2009

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Citations

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