A flexible substrate for a TFT includes a metal substrate having a predetermined coefficient of thermal expansion, and a buffer layer on the metal substrate, the buffer layer including a silicon oxide or a silicon nitride, wherein the predetermined coefficient of thermal expansion of the metal substrate satisfies an equation as follows, [formula] E f representing Young\'s modulus of the buffer layer, v f representing Poisson\'s ratio of the buffer layer, Î± f representing a coefficient of thermal expansion of the buffer layer, and Î± s representing the predetermined coefficient of thermal expansion of the metal substrate.

Claims

23 · 3 independent · depth 3

23 granted claims

›1.independentA flexible substrate, comprising:na metal substrate having a predetermined coefficient of thermal expansion; anda buffer layer on the metal substrate,…+9

›2.↳ 1The flexible substrate as claimed in claim 1, wherein the buffer layer includes a silicon oxide, and the predetermined coefficient of thermal expansio…d2

›3.↳ 1The flexible substrate as claimed in claim 1, wherein the buffer layer includes a silicon nitride, and the predetermined coefficient of thermal expans…d2

›4.↳ 1The flexible substrate as claimed in claim 1, wherein the predetermined coefficient of thermal expansion of the metal substrate satisfies an equation …d2+2

›20.↳ 1The flexible substrate as claimed in claim 1, wherein:nthe buffer layer is silicon oxide having a Young's modulus of the silicon oxide of about 70GPa,…d2+1

›22.↳ 1The flexible substrate as claimed in claim 1, wherein the buffer layer is silicon nitride having a Young's modulus of the silicon nitride of about 120…d2+1

›7.independentA method of fabricating a flexible substrate, comprising:nforming a metal substrate having a predetermined coefficient of thermal expansion; andformin…+6

›8.↳ 7The method as claimed in claim 7, wherein the buffer layer is formed of a silicon oxide and the metal substrate has a coefficient of thermal expansion…d2

›9.↳ 7The method as claimed in claim 7, wherein the buffer layer is formed of a silicon nitride and the metal substrate has a coefficient of thermal expansi…d2

›10.↳ 7The method as claimed in claim 7, wherein the predetermined coefficient of thermal expansion of the metal substrate satisfies an equation as follows:d2+2

›13.↳ 7The method as claimed in claim 7, wherein the buffer layer is formed on the metal substrate at a temperature of about 300° C. to about 400° C.d2

›14.independentA thin film transistor (TFT), comprising:na metal substrate having a predetermined coefficient of thermal expansion; anda buffer layer on the metal su…+5

Classifications

10 codes

IPC · International Patent Classification

Section B — Performing operations; transporting

B32B15/04

Section H — Electricity

H05H1/24

USPC · US Patent Classification

428/469428/450428/606428/427.2428/470428/472427/579428/457

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Gwendolyn Blackwell

art unit 1784 · TC 1700

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Type	Document	Date
related publication	US 20090256154 A1	15 Oct 2009

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