Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same

An organic light emitting diode (OLED) display device comprising:na substrate;a semiconductor layer disposed on the substrate and crystallized using a metal catalyst;a gate insulating layer disposed on a surface of the semiconductor layer;a gate electrode disposed on the gate insulating layer;an interlayer insulating layer disposed on the gate electrode;source and drain electrodes disposed on the interlayer insulating layer and electrically connected to source and drain regions, respectively, of the semiconductor layer through contact holes and exposing predetermined regions of the source and drain regions of the semiconductor layer formed within the gate insulating layer and the interlayer insulating layer;a first electrode electrically connected to one of the source and drain electrodes;an organic layer including an emitting layer disposed on the first electrode; anda second electrode disposed on the organic layer,wherein a metal silicide comprising a metal that is different from the metal catalyst is present within a region of the semiconductor layer under each contact hole, from the surface of the semiconductor layer to a predetermined depth, andthe metal catalyst from a channel region of the semiconductor layer is gettered into the regions of the semiconductor layer disposed under each contact hole.

A thin film transistor (TFT) comprising:na substrate;a semiconductor layer disposed on the substrate and crystallized using a metal catalyst;a gate insulating layer disposed on a surface of the semiconductor layer;a gate electrode disposed on the gate insulating layer;an interlayer insulating layer disposed on the gate electrode; andsource and drain electrodes disposed on the interlayer insulating layer and electrically connected to source and drain regions, respectively, of the semiconductor layer through contact holes exposing predetermined regions of the source and drain regions of the semiconductor layer and formed within the gate insulating layer and the interlayer insulating layer,wherein a metal silicide comprising a metal that is different from the metal catalyst is present within a region of the semiconductor layer under each contact hole, from the surface of the semiconductor layer to a predetermined depth, andthe metal catalyst from a channel region of the semiconductor layer is gettered into the regions of the semiconductor layer disposed under each contact hole.