Semiconductor device
Granted 28 Jun 2011 · 2 office actions
Current assignee: Semiconductor Energy Laboratory Co., Ltd. · originally Semiconductor Energy Laboratory
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Inventors: Kazuya Hanaoka, Hideto Ohnuma, Teruyuki Fujii · Examiner: Hoang V Nguyen · AU 2821 · TC 2800
Life of the patent
9 dated eventsAbstract
An object of the present invention is to prevent electrical characteristics of circuit elements from being adversely affected by copper diffusion in a semiconductor device having an integrated circuit and an antenna formed over the same substrate, which uses copper plating for the antenna. Another object is to prevent a defect of a semiconductor device due to poor connection between an antenna and an integrated circuit in a semiconductor device having the integrated circuit and the antenna formed over the same substrate. In a semiconductor device having an integrated circuit 100 and an antenna 101 formed over one substrate 102 , when a copper plating layer 108 is used for a conductor of the antenna 101 , it is possible to prevent copper diffusion to circuit elements and decrease an adverse effect on electrical characteristics of circuit elements due to the copper diffusion because a base layer 107 of the antenna 101 uses a nitride film of a predetermined metal. Moreover, by the use of nickel nitride as a metal nitride for the base layer of the antenna, poor connection between the antenna and the integrated circuit can be decreased.
Claims
16 · 4 independent · depth 2Classifications
3 codes- H01Q1/38
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1 priority documents›Priority documents — 1
| Type | Document | Date |
|---|---|---|
| related publication | US 20100270868 A1 | 28 Oct 2010 |
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