USPatentGranted
B2

Semiconductor device and manufacturing method of semiconductor device

Granted 10 Aug 2010 · 2 office actions

Life of the patent

3 dated events
⤢ drag to zoomJul 2007Jan 2008Jul 2008Jan 2009Jul 2009Jan 2010Jul 2010Prosecution
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Abstract

The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer. In addition, a substrate covering an element formation layer side is a substrate having a support on its surface is used in the manufacturing process.

Claims

16 · 4 independent · depth 2
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16 granted claims

Classifications

5 codes
IPC · International Patent Classification
Section H — Electricity
  • H01L29/06
USPC · US Patent Classification
257/531257/532257/679257/E29.009

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File wrapper

Pendency
3.1 y
1,146 days filing → grant
Office actions
1
after a restriction
Responses
2
1 RCE
Examiner
Victor A Mandala
art unit 2826 · TC 2800
Citations: 12 back · 0 forward

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Priority chain

1 priority documents
›Priority documents — 1
TypeDocumentDate
related publicationUS 20070296037 A127 Dec 2007

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