Semiconductor device and manufacturing method of semiconductor device
Granted 10 Aug 2010 · 2 office actions
Assignee: Semiconductor Energy Laboratory
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Attorney: Attorney · Log in to unlock
Inventors: Eiji Sugiyama, Naoto Kusumoto, Kaori Ogita, Daiki Yamada +3 · Examiner: Victor A Mandala · AU 2826 · TC 2800
Life of the patent
3 dated eventsAbstract
The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer. In addition, a substrate covering an element formation layer side is a substrate having a support on its surface is used in the manufacturing process.
Claims
16 · 4 independent · depth 2Classifications
5 codes- H01L29/06
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1 priority documents›Priority documents — 1
| Type | Document | Date |
|---|---|---|
| related publication | US 20070296037 A1 | 27 Dec 2007 |
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