Diode having vertical structure and method of manufacturing the same

A vertical light emitting device, comprising:na GaN layer having multilayer structure and including an n-type layer, an active layer, and a p-type layer, the GaN layer having a first surface and a second surface;a conductive structure on the first surface of the GaN layer, wherein the conductive structure comprises a first electrode, wherein the first electrode is in contact with the first surface of the GaN layer and a surface of the first electrode contacting the first surface of the GaN layer reflects light from the active layer back through the second surface of the GaN layer; anda second electrode on the second surface of the GaN layer;wherein the conductive structure is located at the bottom of the light emitting device.

A vertical light emitting device, comprising:na first GaN layer of a first conductivity;an active layer on the first GaN layer;a second GaN layer of a second conductivity on the active layer;a first ohmic layer directly on the first GaN layer, wherein a surface of the first ohmic layer contacting the GaN layer reflects light from the active layer;a second ohmic layer on a surface the second GaN layer; anda pad over the second ohmic layer,wherein the first ohmic layer is configured to reflect light from the active layer back through the surface of the second GaN layer.

A diode, comprising:na conductive structure;an n-GaN layer on the conductive structure;an active layer on the n-GaN layer;a p-GaN layer on the active layer; anda p-electrode on a surface of the p-GaN layer;wherein the conductive structure comprises an n-electrode, wherein a surface of the n-electrode that contacts the n-GaN layer reflects lights from the active layer back through the surface of the p-GaN layer,wherein the conductive layer is located at the bottom of the diode.