Method of forming inorganic alignment film, inorganic alignment film, substrate for electronic device, liquid crystal panel and electronic apparatus

A method of forming an inorganic alignment film on a base substrate, comprising:na film-forming step of forming a film made substantially of an inorganic material on the base substrate; anda milling step of irradiating ion beams onto a surface of the film from a direction inclined at a predetermined angle θb with respect to a direction vertical to the surface of the film,wherein the milling step further includes forming concave portions in the surface of the film, the concave portions having inclined surfaces, and arranging an inclination direction of the inclined surfaces to provide the concave portions with a predetermined directivity.

A method of forming an inorganic alignment film on a base substrate, comprising:na film-forming step of forming a film made substantially of an inorganic material on the base substrate; anda milling step of irradiating ion beams onto a surface of the film from a direction inclined at a predetermined angle θb with respect to a direction vertical to the surface of the film,wherein in the milling step, a current of the ion beams to be irradiated is about 100 to about 1000 mA.

A method of forming an inorganic alignment film on a base substrate, comprising:na film-forming step of forming a film made substantially of an inorganic material on the base substrate; anda milling step of irradiating ion beams onto a surface of the film from a direction inclined at a predetermined angle θb with respect to a direction vertical to the surface of the film,wherein an average thickness of the inorganic alignment film is about 0.02 to about 0.3 μm.