USPatentGranted
B2

Semiconductor light emitting element and light emitting device using this

Granted 30 Jan 2007 · 6 office actions

Life of the patent

3 dated events
⤢ drag to zoomJul 2002Jan 2003Jul 2003Jan 2004Jul 2004Jan 2005Jul 2005Jan 2006Jul 2006Jan 2007Prosecution
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Abstract

The semiconductor light emitting device is composed of a combination of a near ultraviolet LED and a phosphor layer including a plurality of phosphors for absorbing near ultraviolet emitted by the near ultraviolet LED and for emitting fluorescence having an emission peak in a visible wavelength region, and the phosphor layer includes four kinds of phosphors, that is, a blue-based phosphor, a green-based phosphor, a red-based phosphor and a yellow-based phosphor. Thus, lowering of luminous flux derived from red-based light with low luminosity is compensated by yellow-based light with comparatively high luminosity, and the resultant white-based light can be well color balanced, and hence, a semiconductor light emitting device emitting white-based light with high luminous flux and a large Ra can be obtained.

Claims

7 · 2 independent · depth 3
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7 granted claims

Classifications

12 codes
IPC · International Patent Classification
Section H — Electricity
  • H01J1/63
  • H01L31/055
USPC · US Patent Classification
313/486252/301.4R313/512313/501257/98252/301.4S257/E33.061252/301.4H252/301.4P257/89

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File wrapper

Pendency
4.3 y
1,586 days filing → grant
Office actions
3
non-final + final
Responses
4
1 RCE
Examiner
Mariceli Santiago
art unit 2879 · TC 2800
Citations: 14 back · 0 forward

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Priority chain

1 priority documents
›Priority documents — 1
TypeDocumentDate
related publicationUS 20040245532 A19 Dec 2004

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